公开(公告)号：US12245424B2

公开(公告)日：2025-03-04

申请号：US17543757

申请日：2021-12-07

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Kuo-Hsing Lee ,  Po-Wen Su ,  Chien-Liang Wu ,  Sheng-Yuan Hsueh

IPC: H10B20/25 ,  H01L49/02

Abstract: An OTP memory capacitor structure includes a semiconductor substrate, a bottom electrode, a capacitor insulating layer and a metal electrode stack structure. The bottom electrode is provided on the semiconductor substrate. The capacitor insulating layer is provided on the bottom electrode. The metal electrode stack structure includes a metal layer, an insulating sacrificial layer and a capping layer stacked in sequence. The metal layer is provided on the capacitor insulating layer and is used as a top electrode. The insulating sacrificial layer is provided between the metal layer and the capping layer. A manufacturing method of the OTP memory capacitor structure is also provided. By the provision of the insulating sacrificial layer, the bottom electrode formed first can be prevented from being damaged by subsequent etching and other processes, so that the OTP memory capacitor structure has better electrical characteristics.

公开(公告)号：US20230147512A1

公开(公告)日：2023-05-11

申请号：US17543757

申请日：2021-12-07

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： KUO-HSING LEE ,  Po-Wen Su ,  Chien-Liang Wu ,  Sheng-Yuan Hsueh

IPC: H01L27/112 ,  H01L49/02

CPC classification number: H01L27/11206 ,  H01L28/75 ,  H01L28/92

Abstract: An OTP memory capacitor structure includes a semiconductor substrate, a bottom electrode, a capacitor insulating layer and a metal electrode stack structure. The bottom electrode is provided on the semiconductor substrate. The capacitor insulating layer is provided on the bottom electrode. The metal electrode stack structure includes a metal layer, an insulating sacrificial layer and a capping layer stacked in sequence. The metal layer is provided on the capacitor insulating layer and is used as a top electrode. The insulating sacrificial layer is provided between the metal layer and the capping layer. A manufacturing method of the OTP memory capacitor structure is also provided. By the provision of the insulating sacrificial layer, the bottom electrode formed first can be prevented from being damaged by subsequent etching and other processes, so that the OTP memory capacitor structure has better electrical characteristics.