公开(公告)号：US09570315B2

公开(公告)日：2017-02-14

申请号：US14662142

申请日：2015-03-18

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chueh-Yang Liu ,  Yi-Liang Ye ,  Ted Ming-Lang Guo ,  Yu-Ren Wang

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31111 ,  H01L21/0206 ,  H01L21/02238 ,  H01L21/28238 ,  H01L21/823462 ,  H01L29/66545

Abstract: A method of an interfacial oxide layer formation comprises a plurality of steps. The step (S1) is to remove a native oxide layer from a surface of a substrate; the step (S2) is to form an oxide layer on a surface of a substrate by piranha solution (SPM); the step (S3) is to cleaning a surface of the oxide layer by standard clean 1 (SC1), and the step (S4) is to etch he oxide layer by a solution comprising diluted hydrogen fluoride (dHF) and ozonized pure water (DIO3).

Abstract translation: 界面氧化层形成的方法包括多个步骤。 步骤（S1）是从衬底的表面除去天然氧化物层; 步骤（S2）是通过比拉鱼溶液（SPM）在基板的表面上形成氧化物层; 步骤（S3）是通过标准清洁1（SC1）清洁氧化物层的表面，并且步骤（S4）通过包含稀释氟化氢（dHF）和臭氧化纯水（DIO3）的溶液蚀刻氧化物层 ）。