公开(公告)号：US08815703B2

公开(公告)日：2014-08-26

申请号：US14071664

申请日：2013-11-05

Applicant: United Microelectronics Corporation

Inventor： Liang-An Huang ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76232

Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Abstract translation: 浅沟槽隔离结构的制造方法包括以下步骤。 首先，提供衬底，其中在衬底中限定高电压器件区域。 然后，执行第一蚀刻工艺以部分地去除衬底，从而在高压器件区域中形成初步浅沟槽。 然后，进行第二蚀刻处理以进一步去除对应于初步浅沟槽的衬底，从而在高电压器件区域中形成第一浅沟槽。 之后，在第一浅沟槽中填充电介质材料，从而形成第一浅沟槽隔离结构。

公开(公告)号：US20140073109A1

公开(公告)日：2014-03-13

申请号：US14071664

申请日：2013-11-05

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Liang-An Huang ,  Yu-Chun Huang ,  Chin-Fu Lin ,  Yu-Ciao Lin ,  Yu-Chieh Lin ,  Hsin-Liang Liu ,  Chun-Hung Cheng ,  Yuan-Cheng Yang ,  Yau-Kae Sheu

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76232

Abstract: A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Abstract translation: 浅沟槽隔离结构的制造方法包括以下步骤。 首先，提供衬底，其中在衬底中限定高电压器件区域。 然后，执行第一蚀刻工艺以部分地去除衬底，从而在高压器件区域中形成初步浅沟槽。 然后，进行第二蚀刻处理以进一步去除对应于初步浅沟槽的衬底，从而在高电压器件区域中形成第一浅沟槽。 之后，在第一浅沟槽中填充电介质材料，从而形成第一浅沟槽隔离结构。