公开(公告)号：US10475640B2

公开(公告)日：2019-11-12

申请号：US16137583

申请日：2018-09-21

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yan-Da Chen ,  Weng Yi Chen ,  Chang-Sheng Hsu ,  Kuan-Yu Wang ,  Yuan Sheng Lin

IPC: H01L21/02 ,  B81C1/00 ,  H01L23/31 ,  H01L21/768

Abstract: Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.

公开(公告)号：US10115582B2

公开(公告)日：2018-10-30

申请号：US14731433

申请日：2015-06-05

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yan-Da Chen ,  Weng Yi Chen ,  Chang-Sheng Hsu ,  Kuan-Yu Wang ,  Yuan Sheng Lin

IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00 ,  H01L21/02

Abstract: Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.