公开(公告)号：US10408780B2

公开(公告)日：2019-09-10

申请号：US15493120

申请日：2017-04-20

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chia-Wei Lee ,  Chang-Sheng Hsu ,  Chih-Fan Hu ,  Chin-Jen Cheng ,  Chang Hsin Wu

IPC: G01N27/12

Abstract: The present invention provides a structure of a gas sensor, comprising: a support, having a front side, a back side opposite to the front side, a cell region, and a peripheral region circling the cell region; a cavity, formed on the back side of the support in the cell region; a heater, disposed on the front side of the support covering the cavity; a sensing element, disposed on the heater; and a sealing layer, formed on the back side of the support covering inside the cavity.

公开(公告)号：US10115582B2

公开(公告)日：2018-10-30

申请号：US14731433

申请日：2015-06-05

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yan-Da Chen ,  Weng Yi Chen ,  Chang-Sheng Hsu ,  Kuan-Yu Wang ,  Yuan Sheng Lin

IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00 ,  H01L21/02

Abstract: Provided herein is a semiconductor device is provided. The semiconductor device includes a substrate including a MEMS region and a connection region thereon; a dielectric layer disposed on the substrate in the connection region; a poly-silicon layer disposed on the dielectric layer, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer; and a passivation layer covering the dielectric layer, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer.

公开(公告)号：US09107017B1

公开(公告)日：2015-08-11

申请号：US14316769

申请日：2014-06-26

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yu-Hsiang Chiu ,  Jeng-Ho Wang ,  Hsin-Yi Lu ,  Chang-Sheng Hsu

IPC: H01L21/3065 ,  H04R31/00 ,  H01L21/304

CPC classification number: H01L21/3065 ,  B81B2201/0257 ,  B81C1/00476 ,  H01L21/304 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: An etching method for manufacturing MEMS devices is provided. The method includes steps of: providing a substrate including a first surface and a second surface opposite to the first surface, wherein a base structure, a sacrificial structure and at least one adhesion layer are arranged on the first surface of the substrate, the adhesion layer is disposed between the base structure and the sacrificial structure, the base structure is disposed between the adhesion layer and the substrate; performing a surface grinding process on the second surface of the substrate; performing a first plasma etching process by using a first mixed gas to remove the sacrificial structure, wherein the first mixed gas includes oxygen and a first nitrogen-based gas; and performing a second plasma etching process by using a second mixed gas to remove the adhesion layer, wherein the second mixed gas includes a second nitrogen-based base gas and a fluorine-based gas.

Abstract translation: 提供了一种用于制造MEMS器件的蚀刻方法。 该方法包括以下步骤：提供包括第一表面和与第一表面相对的第二表面的基底，其中基底结构，牺牲结构和至少一个粘合层布置在基底的第一表面上，粘附层 设置在基底结构和牺牲结构之间，基底结构设置在粘合层和基底之间; 在所述基板的所述第二表面上进行表面研磨处理; 通过使用第一混合气体去除牺牲结构来执行第一等离子体蚀刻工艺，其中第一混合气体包括氧和第一氮基气体; 以及通过使用第二混合气体来除去粘附层进行第二等离子体蚀刻工艺，其中第二混合气体包括第二氮基基础气体和氟基气体。

公开(公告)号：US10475640B2

公开(公告)日：2019-11-12

申请号：US16137583

申请日：2018-09-21

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yan-Da Chen ,  Weng Yi Chen ,  Chang-Sheng Hsu ,  Kuan-Yu Wang ,  Yuan Sheng Lin

IPC: H01L21/02 ,  B81C1/00 ,  H01L23/31 ,  H01L21/768

Abstract: Provided herein is a method for manufacturing a semiconductor device. A substrate including a MEMS region and a connection region thereon is provided; a dielectric layer disposed on the substrate in the connection region is provided; a poly-silicon layer disposed on the dielectric layer is provided, wherein the poly-silicon layer serves as an etch-stop layer; a connection pad disposed on the poly-silicon layer is provided; and a passivation layer covering the dielectric layer is provided, wherein the passivation layer includes an opening that exposes the connection pad and a transition region between the connection pad and the passivation layer, and a conductive layer conformally covering the connection pad and the poly-silicon layer in the transition region is provided.