公开(公告)号：US20180308962A1

公开(公告)日：2018-10-25

申请号：US16021046

申请日：2018-06-28

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Junhong LI

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/7393 ,  H01L29/0878 ,  H01L29/405 ,  H01L29/7394 ,  H01L29/7816

Abstract: A lateral insulated gate bipolar transistor (LIGBT) and method for eliminating the transistor tail current. The lateral insulated gate bipolar transistor comprises the silicon substrate, the buried oxide, and the drift region, the channel region, ohm-contact-high-doping region, the cathode, the gate dielectric, the anode contact, the gate, the cathode contact, the anode, which are placed above the silicon substrate, the electric field intensifier is placed at the upper surface of the drift region between the anode and the channel region to generate an electric field that starts from anode and points to the bottom surface of the electric field intensifier. The electric field intensifier is isolated from the drift region by the dielectric. The invention realizes performance improvements for both the conduction and the switching behaviors of the LIGBT device.