公开(公告)号：US20160163468A1

公开(公告)日：2016-06-09

申请号：US15042652

申请日：2016-02-12

Applicant: University of Seoul Industry Cooperation Foundation

Inventor： Byung Eun Park

IPC: H01G9/20

CPC classification number: H01L31/022425 ,  H01L31/022466 ,  H01L31/06 ,  Y02E10/542

Abstract: A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type. The upper electrode is made of transparent conductive material, and is formed on the second conductivity-type semiconductor layer.

Abstract translation: 公开了具有高光电转换效率的硅太阳能电池。 根据本发明的用于将从外部入射的光转换成电的太阳能电池包括基板，下电极，铁电层，辅助电极，第一导电型半导体层，第二导电型半导体层和 上电极。 下电极形成在基板上。 铁基层形成在基板上，下部电极外侧。 辅助电极形成在铁电层上。 第一导电型半导体层形成在下电极和辅助电极上。 第二导电型半导体层形成在第一导电型半导体层上，由与第一导电类型相反的第二导电类型的半导体构成。 上电极由透明导电材料制成，并形成在第二导电型半导体层上。

公开(公告)号：US20150295193A1

公开(公告)日：2015-10-15

申请号：US14646885

申请日：2013-11-22

Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION

Inventor： Byung Eun Park

IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05

CPC classification number: H01L51/0097 ,  H01L51/0021 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

Abstract: Disclosed are a semiconductor device manufactured using a paper as a substrate and a method of manufacturing the same. According to an embodiment of the present invention, the semiconductor device is manufactured by using a paper including pulp as a raw material or paper as a substrate coated with a heat-resistant material such as silicon. According to the present invention, a metal wiring layer such as a gate electrode is formed on the paper substrate by using a vacuum deposition method, or the like and an insulating layer is stacked thereon.

Abstract translation: 公开了使用纸作为基板制造的半导体器件及其制造方法。 根据本发明的实施例，通过使用包含纸浆作为原材料的纸作为涂覆有诸如硅的耐热材料的基材来制造半导体器件。 根据本发明，通过使用真空沉积法等在纸基材上形成诸如栅电极的金属布线层，并且在其上层叠绝缘层。