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公开(公告)号：US11309510B2
公开(公告)日：2022-04-19
申请号：US16928295
申请日：2020-07-14
发明人： Jin Jang , Jeong Gi Kim
摘要： Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2
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公开(公告)号：US10804337B2
公开(公告)日：2020-10-13
申请号：US15818981
申请日：2017-11-21
发明人： Jin Jang , Yuanfeng Chen , Jae Gwang Um
IPC分类号： G06F3/041 , H01L27/32 , G06F3/044 , G09G3/3275 , G09G3/3233
摘要： Disclosed is an in-cell type organic electroluminescent device. The in-cell type organic electroluminescent device according to an embodiment of the present disclosure includes at least one OLED-driving Thin-Film Transistor (OLED driving TFT) that is formed on a substrate and drives an organic light emitting device (OLED); the OLED connected to the at least one OLED driving TFT through a first contact hole; at least one touch-sensing thin-film transistor (though sensing TFT) that is simultaneously formed with the at least one OLED driving TFT on the substrate and senses touch; and an touch electrode that is connected to the at least one touch sensing TFT through a second contact hole and does not overlap with the OLED, wherein the at least one OLED driving TFT and the at least one touch sensing TFT share a gate line.
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公开(公告)号：US11818907B2
公开(公告)日：2023-11-14
申请号：US17511882
申请日：2021-10-27
发明人： Jin Jang , Eun Sa Hwang , Hyo Min Kim
IPC分类号： H01L51/50 , H01L51/00 , H01L51/56 , H10K50/115 , H10K50/15 , H10K50/17 , H10K50/19 , H10K50/13 , H10K50/16 , H10K71/00 , H10K71/12 , H10K85/10 , H10K85/60 , H10K102/00
CPC分类号： H10K50/115 , H10K50/131 , H10K50/15 , H10K50/157 , H10K50/167 , H10K50/17 , H10K50/171 , H10K50/19 , H10K71/00 , H10K71/12 , H10K85/111 , H10K85/1135 , H10K85/151 , H10K85/626 , H10K85/633 , H10K85/636 , H10K85/6572 , H10K2102/00
摘要： Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.
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公开(公告)号：US11437579B2
公开(公告)日：2022-09-06
申请号：US16612882
申请日：2018-03-22
发明人： Jin Jang , Min Sang Park
摘要： Disclosed is a method of fabricating a stretchable electronic device, the method including a step of forming one or more semiconductor devices on a first carrier substrate; a step of forming semiconductor device array patterns by separating semiconductor device arrays each including the semiconductor devices; a step of releasing the semiconductor device array patterns from the first carrier substrate; a step of forming a stretchable substrate on a second carrier substrate; and a step of transferring the released semiconductor device array patterns onto the stretchable substrate.
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公开(公告)号：US11374129B2
公开(公告)日：2022-06-28
申请号：US16546904
申请日：2019-08-21
发明人： Jin Jang , Su Hui Lee
IPC分类号： H01L29/786 , H01L27/12 , H01L29/417 , H01L29/06 , H01L29/41
摘要： Disclosed are an oxide semiconductor thin film transistor and a method of fabricating the same. An oxide semiconductor thin film transistor according to an embodiment of the present disclosure includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator; source and drain electrodes formed by depositing carbon nanotubes (CNTs) and a metal electrode on the formed the oxide semiconductor layer and patterning the deposited CNTs and metal electrode such that the source electrode and the drain electrode are spaced apart from each other; and a passivation layer formed on the formed source and drain electrodes, wherein the source and drain electrodes serve to prevent diffusion of a metal of the metal electrode into the formed oxide semiconductor layer, due to the CNTs of the source and drain electrodes.
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公开(公告)号：US11296232B2
公开(公告)日：2022-04-05
申请号：US16759562
申请日：2018-10-29
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/32 , H01L29/66
摘要： An oxide thin-film transistor includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator to correspond to the first gate electrode; source/drain electrodes formed to be spaced from each other on the oxide semiconductor layer and formed in a shape of a plurality of island patterns; a passivation layer formed on the source/drain electrodes, where the source/drain electrodes include a first area formed in a direction of the first gate electrode with respect to a horizontal plane of the substrate; and a second area formed in an opposite direction to the first area, and the plurality of island patterns are formed such that the first areas are separated from each other and thus have resistance to external stress.
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公开(公告)号：US20200066913A1
公开(公告)日：2020-02-27
申请号：US16546904
申请日：2019-08-21
发明人： Jin Jang , Su Hui Lee
IPC分类号： H01L29/786 , H01L27/12 , H01L29/06 , H01L29/41 , H01L29/417
摘要： Disclosed are an oxide semiconductor thin film transistor and a method of fabricating the same. An oxide semiconductor thin film transistor according to an embodiment of the present disclosure includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator; source and drain electrodes formed by depositing carbon nanotubes (CNTs) and a metal electrode on the formed the oxide semiconductor layer and patterning the deposited CNTs and metal electrode such that the source electrode and the drain electrode are spaced apart from each other; and a passivation layer formed on the formed source and drain electrodes, wherein the source and drain electrodes serve to prevent diffusion of a metal of the metal electrode into the formed oxide semiconductor layer, due to the CNTs of the source and drain electrodes.
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公开(公告)号：US11638381B2
公开(公告)日：2023-04-25
申请号：US17836673
申请日：2022-06-09
发明人： Jin Jang , Hyo Min Kim
IPC分类号： H01L51/00
摘要： The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.
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公开(公告)号：US11600796B2
公开(公告)日：2023-03-07
申请号：US17150469
申请日：2021-01-15
发明人： Jin Jang , Christophe Avis , Jeong Gi Kim
摘要： Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below: Cu2Sn2-XS3—(GaX)2O3, [Formula 1] wherein X is greater than 0.2 and less than 1.5 (0.2
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公开(公告)号：US11569471B2
公开(公告)日：2023-01-31
申请号：US17680757
申请日：2022-02-25
发明人： Jin Jang , Jeong Gi Kim
摘要： Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: Cu2Sn2-XS3—(GaX)2O3. Here, 0.2
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