公开(公告)号：US20200243386A1

公开(公告)日：2020-07-30

申请号：US16258389

申请日：2019-01-25

Applicant: United Microelectronics Corp.

Inventor： CHU-FU LIN ,  Ming-Tse Lin ,  Chun-Hung Chen

IPC: H01L21/768 ,  H01L23/48 ,  H01L21/311

Abstract: A method for fabricating semiconductor device includes providing a preliminary device layer, having a substrate on top and a through substrate via (TSV) structure in the substrate. A top portion of the TSV structure protrudes out from the substrate. A dielectric layer is disposed over the substrate to cover the substrate and the TSV structure. A coating layer is formed over the dielectric layer, wherein the coating layer fully covers over the dielectric layer with a flat surface. An anisotropic etching process is performed to the coating layer and the dielectric layer without etching selection until the TSV structure is exposed.