公开(公告)号：US20240355936A1

公开(公告)日：2024-10-24

申请号：US18327081

申请日：2023-06-01

申请人： United Microelectronics Corp.

发明人： Boon Keat Toh ,  Chih-Hsin Chang ,  Szu Han Wu ,  Chi Ren

IPC分类号： H01L29/788 ,  H01L29/45 ,  H01L29/66 ,  H10B41/35

CPC分类号： H01L29/788 ,  H01L29/456 ,  H01L29/66492 ,  H01L29/66825 ,  H10B41/35

摘要： Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate having a first memory region. The first memory region includes a first dielectric layer, a first floating gate, a first inter-gate dielectric layer, a control gate and a first contact. The first dielectric layer is disposed on the substrate. The first floating gate is disposed on the first dielectric layer. The first inter-gate dielectric layer is disposed on the first floating layer. The control gate is disposed on the first inter-gate dielectric layer. The first contact penetrates through the first control gate and the first inter-gate dielectric layer and is landed on the first floating gate.