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公开(公告)号：US20220293679A1
公开(公告)日：2022-09-15
申请号：US17224140
申请日：2021-04-07
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Wen-Hsin Hsu , Ko-Chi Chen , Tzu-Yun Chang , Chung-Tse Chen
Abstract: A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.
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Patent Agency Ranking
公开(公告)号：US11706933B2
公开(公告)日：2023-07-18
申请号：US17224140
申请日：2021-04-07
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Wen-Hsin Hsu , Ko-Chi Chen , Tzu-Yun Chang , Chung-Tse Chen
CPC classification number: H10B63/80 , H10B63/30 , H10N70/041 , H10N70/24 , H10N70/8833
Abstract: A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.
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公开(公告)号：US11508783B2
公开(公告)日：2022-11-22
申请号：US17235785
申请日：2021-04-20
Applicant: United Microelectronics Corp.
Inventor： Chung-Tse Chen , Ko-Chi Chen , Tzu-Yun Chang
Abstract: A method for fabricating memory device is provided. The method includes forming a transistor on a substrate. Further, a contact structure is formed on a source/drain region of the transistor. A conductive layer is formed on the contact structure. Four memory structures are formed on the conductive layer to form a quadrilateral structure.
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公开(公告)号：US20210242282A1
公开(公告)日：2021-08-05
申请号：US17235785
申请日：2021-04-20
Applicant: United Microelectronics Corp.
Inventor： Chung-Tse Chen , Ko-Chi Chen , Tzu-Yun Chang
Abstract: A method for fabricating memory device is provided. The method includes forming a transistor on a substrate. Further, a contact structure is formed on a source/drain region of the transistor. A conductive layer is formed on the contact structure. Four memory structures are formed on the conductive layer to form a quadrilateral structure.
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公开(公告)号：US11024672B2
公开(公告)日：2021-06-01
申请号：US16418770
申请日：2019-05-21
Applicant: United Microelectronics Corp.
Inventor： Chung-Tse Chen , Ko-Chi Chen , Tzu-Yun Chang
Abstract: A structure of memory device is provided. The structure of memory device includes a transistor formed on a substrate. A contact structure is disposed on a source/drain region of the transistor. A conductive layer is disposed on the contact structure. Four memory structures is disposed on the conductive layer to form a quadrilateral structure.
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公开(公告)号：US20200328255A1
公开(公告)日：2020-10-15
申请号：US16418770
申请日：2019-05-21
Applicant: United Microelectronics Corp.
Inventor： Chung-Tse Chen , Ko-Chi Chen , Tzu-Yun Chang
Abstract: A structure of memory device is provided. The structure of memory device includes a transistor formed on a substrate. A contact structure is disposed on a source/drain region of the transistor. A conductive layer is disposed on the contact structure. Four memory structures is disposed on the conductive layer to form a quadrilateral structure.
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