公开(公告)号：US20180114787A1

公开(公告)日：2018-04-26

申请号：US15365602

申请日：2016-11-30

Applicant: United Microelectronics Corp.

Inventor： Heng-Yu Lin ,  Kuei-Chih Fan ,  Hou-Jen Chiu ,  Mei-Ling Chao ,  Tien-Hao Tang

IPC: H01L27/02 ,  H01L29/78 ,  H01L29/10 ,  H01L29/40

CPC classification number: H01L27/0274 ,  H01L29/1095 ,  H01L29/408 ,  H01L29/7816 ,  H01L29/7835

Abstract: An ESD protection device on a substrate includes a base doped region of a first conductivity type. A first inter doped region of a second conductivity type is in the base doped region. A drain region of the second conductivity type in the first inter doped region is connected to a first electrode terminal. An inserted doped region of the first conductivity type is in the drain region. A second inter doped region of the second conductivity type is in the base doped region. A source region of the second conductivity type is in the second inter doped region. A substrate-surface doped region of the first conductivity type in the substrate is adjacent to or in contact with the source region. A gate structure is between the drain and source regions in the substrate. The substrate-surface doped region and the source region are connected to a second electrode terminal.

公开(公告)号：US10163895B2

公开(公告)日：2018-12-25

申请号：US15365602

申请日：2016-11-30

Applicant: United Microelectronics Corp.

Inventor： Heng-Yu Lin ,  Kuei-Chih Fan ,  Hou-Jen Chiu ,  Mei-Ling Chao ,  Tien-Hao Tang

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/40

Abstract: An ESD protection device on a substrate includes a base doped region of a first conductivity type. A first inter doped region of a second conductivity type is in the base doped region. A drain region of the second conductivity type in the first inter doped region is connected to a first electrode terminal. An inserted doped region of the first conductivity type is in the drain region. A second inter doped region of the second conductivity type is in the base doped region. A source region of the second conductivity type is in the second inter doped region. A substrate-surface doped region of the first conductivity type in the substrate is adjacent to or in contact with the source region. A gate structure is between the drain and source regions in the substrate. The substrate-surface doped region and the source region are connected to a second electrode terminal.