公开(公告)号：US11195905B2

公开(公告)日：2021-12-07

申请号：US16358556

申请日：2019-03-19

Applicant: United Microelectronics Corp.

Inventor： Hsiang-Hua Hsu ,  Liang-An Huang ,  Sheng-Chen Chung ,  Chen-An Kuo ,  Chiu-Te Lee ,  Chih-Chung Wang ,  Kuang-Hsiu Chen ,  Ke-Feng Lin ,  Yan-Huei Li ,  Kai-Ting Hu

IPC: H01L29/06 ,  H01L21/265 ,  H01L29/66 ,  H01L29/778

Abstract: A metal-oxide-semiconductor (MOS) transistor includes a substrate. The substrate has a plurality of trenches extending along a first direction and located on a top portion of the substrate. A gate structure line is located on the substrate and extends along a second direction intersecting with the first direction and crossing over the trenches. A first doped line is located in the substrate, located at a first side of the gate structure line, and crosses over the trenches. A second doped line is located in the substrate, located at a second side of the gate structure line, and crosses over the trenches.