公开(公告)号：US20220122869A1

公开(公告)日：2022-04-21

申请号：US17135911

申请日：2020-12-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Wei Cheng ,  Chien-Hao Chen

IPC: H01L21/68 ,  H01L23/544

Abstract: An alignment system includes a light source for emitting a light. An alignment mark is disposed on a substrate for receiving the light. The alignment mark includes a first pattern and a second pattern disposed on the substrate. The first pattern includes a first region and a second region. The second pattern includes a third region and a fourth region. The first region and the third region are symmetrical with respective to a symmetrical axis. The second region and the fourth region are symmetrical with respective to the symmetrical axis. The first region includes first mark lines parallel to each other. The second region includes second mark lines parallel to each other. A first pitch is disposed between the first mark lines adjacent to each other. A second pitch is disposed between the second mark lines adjacent to each other. The first pitch is different from the second pitch.

公开(公告)号：US20240111220A1

公开(公告)日：2024-04-04

申请号：US17979765

申请日：2022-11-03

Applicant: United Microelectronics Corp.

Inventor： Yu-Wei Cheng

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: An overlay target that includes a plurality of working zones and a plurality of line segments. The line segments in each of the working zones have a plurality of widths and are parallel to each other.

公开(公告)号：US11651985B2

公开(公告)日：2023-05-16

申请号：US17135911

申请日：2020-12-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Wei Cheng ,  Chien-Hao Chen

IPC: H01L21/68 ,  H01L23/544

CPC classification number: H01L21/682 ,  H01L23/544 ,  H01L2223/54426

Abstract: An alignment system includes a light source for emitting a light. An alignment mark is disposed on a substrate for receiving the light. The alignment mark includes a first pattern and a second pattern disposed on the substrate. The first pattern includes a first region and a second region. The second pattern includes a third region and a fourth region. The first region and the third region are symmetrical with respective to a symmetrical axis. The second region and the fourth region are symmetrical with respective to the symmetrical axis. The first region includes first mark lines parallel to each other. The second region includes second mark lines parallel to each other. A first pitch is disposed between the first mark lines adjacent to each other. A second pitch is disposed between the second mark lines adjacent to each other. The first pitch is different from the second pitch.

公开(公告)号：US11043460B2

公开(公告)日：2021-06-22

申请号：US17000365

申请日：2020-08-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Wei Cheng ,  Bo-Jou Lu ,  Chun-Chi Yu

IPC: H01L23/544 ,  H01L21/66

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

公开(公告)号：US10811362B2

公开(公告)日：2020-10-20

申请号：US16243083

申请日：2019-01-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Wei Cheng ,  Bo-Jou Lu ,  Chun-Chi Yu

IPC: H01L23/544 ,  H01L21/66

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.

公开(公告)号：US20200219821A1

公开(公告)日：2020-07-09

申请号：US16243083

申请日：2019-01-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Wei Cheng ,  Bo-Jou Lu ,  Chun-Chi Yu

IPC: H01L23/544 ,  H01L21/66

Abstract: An overlay mark structure includes a plurality of first patterns of a previous layer and a plurality of second patterns of a current layer. Each of the second patterns includes a first section and a second section. The first section is disposed corresponding to one of the first patterns in a vertical direction. The first section partially overlaps the first pattern corresponding to the first section in the vertical direction. The second section is separated from the first section in an elongation direction of the second pattern. A part of the first pattern corresponding to the first section is disposed between the first section and the second section in the elongation direction of the second pattern. A measurement method of the overlay mark structure includes performing a diffraction-based overlay measurement between each of the first sections and the first pattern overlapping the first section.