公开(公告)号：US12219886B2

公开(公告)日：2025-02-04

申请号：US17388027

申请日：2021-07-29

Applicant: United Semiconductor (Xiamen) Co., Ltd.

Inventor： Shuzhi Zou ,  Dejin Kong ,  Xiang Bo Kong ,  Chin-Chun Huang ,  Wen Yi Tan

IPC: H10N70/20 ,  H10N70/00

Abstract: A resistive memory device includes a stacked structure and a copper via conductor structure. The stacked structure includes a first electrode, a second electrode, and a variable resistance layer. The second electrode is disposed above the first electrode in a vertical direction, and the variable resistance layer is disposed between the first electrode and the second electrode in the vertical direction. The copper via conductor structure is disposed under the stacked structure. The first electrode includes a tantalum nitride layer directly connected with the copper via conductor structure.

公开(公告)号：US20220416159A1

公开(公告)日：2022-12-29

申请号：US17388027

申请日：2021-07-29

Applicant: United Semiconductor (Xiamen) Co., Ltd.

Inventor： Shuzhi Zou ,  DEJIN KONG ,  Xiang Bo Kong ,  Chin-Chun Huang ,  WEN YI TAN

IPC: H01L45/00

Abstract: A resistive memory device includes a stacked structure and a copper via conductor structure. The stacked structure includes a first electrode, a second electrode, and a variable resistance layer. The second electrode is disposed above the first electrode in a vertical direction, and the variable resistance layer is disposed between the first electrode and the second electrode in the vertical direction. The copper via conductor structure is disposed under the stacked structure. The first electrode includes a tantalum nitride layer directly connected with the copper via conductor structure.