公开(公告)号：US20230352347A1

公开(公告)日：2023-11-02

申请号：US17752869

申请日：2022-05-25

申请人： United Semiconductor (Xiamen) Co., Ltd.

发明人： LINSHAN YUAN ,  Guang Yang ,  YUCHUN GUO ,  JINJIAN OUYANG ,  Chin-Chun Huang ,  WEN YI TAN

IPC分类号： H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823871 ,  H01L27/092

摘要： A method for fabricating a semiconductor device is disclosed. A substrate having thereon at least one metal-oxide-semiconductor (MOS) transistor is provided. A stress memorization technique (SMT) process is performed. The SMT process includes steps of depositing an SMT film covering the at least one MOS transistor on the substrate, and subjecting the SMT film to a thermal process. A lithographic process and an etching process are performed to form a patterned SMT film. A silicide layer is formed on the MOS transistor. The patterned SMT film acts as a salicide block layer when forming the silicide layer.