公开(公告)号：US12132447B2

公开(公告)日：2024-10-29

申请号：US18262527

申请日：2023-01-13

Applicant: University of Electronic Science and Technology of China

Inventor： Yiming Yu ,  Kai Kang ,  Chenxi Zhao ,  Huihua Liu ,  Yunqiu Wu

IPC: H03D7/14 ,  H04B1/00

CPC classification number: H03D7/1458 ,  H03D7/1441 ,  H04B1/005

Abstract: The present invention belongs to the technical field of 5G millimeter wave communication and discloses a 5G dual-band up-mixer with switching between amplification function and frequency mixing function, and terminal. The first double-balanced active mixer and the second double-balanced active mixer are connected in series, and both ends of the first double-balanced active mixer are connected with a first transformer and a second transformer respectively; both ends of the second double-balanced active mixer are respectively connected with the second transformer and the third transformer; the first double-balanced active mixer is provided with a first MOSFET and a fourth transformer connected with the first MOSFET; the second double-balanced active mixer is provided with a second MOSFET and a fifth transformer connected with the second MOSFET.

公开(公告)号：US12184317B2

公开(公告)日：2024-12-31

申请号：US18262503

申请日：2023-01-13

Applicant: University of Electronic Science and Technology of China

Inventor： Chenxi Zhao ,  Kai Kang ,  Yiming Yu ,  Huihua Liu ,  Yunqiu Wu

IPC: H04B1/16 ,  H03D7/14 ,  H04B1/24

Abstract: This invention, falling into the field of radio communication technology, discloses 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal. In the said 5G millimeter wave dual-band dual-mode mixer, the first MOSFET is connected to the source of the second MOSFET and the third MOSFET through its drain, with the first MOSFET connected to the drain of the fourth MOSFET through its drain. The second MOSFET is connected to one end of the first capacitor through its gate, with the other end of the first capacitor connected to the drain of the third MOSFET. The third MOSFET is connected to one end of the second capacitor through its gate and the other end of the second capacitor is connected to the drain of the second MOSFET.