公开(公告)号：US20210217901A1

公开(公告)日：2021-07-15

申请号：US17078109

申请日：2020-10-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yong ZHANG ,  Chengkai WU ,  Han WANG ,  Haomiao WEI ,  Ruimin XU ,  Bo YAN

IPC: H01L29/872 ,  H01L29/66

Abstract: A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.