公开(公告)号：US20210279379A1

公开(公告)日：2021-09-09

申请号：US17029087

申请日：2020-09-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yuehang XU ,  Shuman MAO ,  Yunqiu WU ,  Ruimin XU ,  Bo YAN

IPC: G06F30/20

Abstract: A parameter extraction method for quasi-physical large-signal model for microwave gallium nitride high-electron-mobility transistors (GaN HEMTs). The method includes: 1) acquiring a data set of parameters for a large-signal model for a plurality of different microwave transistors GaN HEMTs having the same size; 2) performing statistical analysis of physical parameters of the large-signal model and sub-models thereof: 3) characterizing the correlation between the physical parameters by factor analysis; and 4) predicting the output characteristics of the GaN HEMTs.

公开(公告)号：US20210217901A1

公开(公告)日：2021-07-15

申请号：US17078109

申请日：2020-10-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yong ZHANG ,  Chengkai WU ,  Han WANG ,  Haomiao WEI ,  Ruimin XU ,  Bo YAN

IPC: H01L29/872 ,  H01L29/66

Abstract: A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.

公开(公告)号：US20210080261A1

公开(公告)日：2021-03-18

申请号：US16816267

申请日：2020-03-12

Applicant: University of Electronic Science and Technology of China

Inventor： Zhuoling XIAO ,  Xinguo YU ,  Yi HE ,  Bo YAN

IPC: G01C21/18 ,  G01C25/00 ,  G06N3/04

Abstract: A pedestrian adaptive zero-velocity update point selection method based on a neural network, including the following steps: S1, collecting inertial navigation data of different pedestrians in different motion modes; S2, preprocessing the inertial navigation data collected in the step S1, labeling the preprocessed data, and obtaining a training data set, a validation data set, and a test data set according to the preprocessed data and a label corresponding to the preprocessed data; S3, inputting the training data set to a convolutional neural network for training, obtaining a pedestrian adaptive zero-velocity update point selection model based on the convolutional neural network, and using the validation data set to validate the pedestrian adaptive zero-velocity update point selection model; and S4, inputting the test data set into the pedestrian adaptive zero-velocity update point selection model based on the convolutional neural network, and obtaining a selection result of pedestrian zero-velocity update points.