公开(公告)号：US20200052687A1

公开(公告)日：2020-02-13

申请号：US16455803

申请日：2019-06-28

Applicant: University of Electronic Science and Technology of China

Inventor： Xin MING ,  Li HU ,  Xuan ZHANG ,  Su PAN ,  Chunqi ZHANG ,  Yao QIN ,  Zhiwen ZHANG ,  Yangli XIN ,  Zhuo WANG ,  Bo ZHANG

IPC: H03K17/06 ,  H03K17/16

Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.