公开(公告)号：US10911045B1

公开(公告)日：2021-02-02

申请号：US17005350

申请日：2020-08-28

Applicant: University of Electronic Science and Technology of China

Inventor： Xin Ming ,  Bo Zhang ,  Qifei Xu ,  Shuai Mao ,  Xudong Feng ,  Zhuo Wang

IPC: H03K17/687

Abstract: A segmented direct gate drive circuit of a depletion mode GaN power device, a gate voltage of the GaN power device is charged from a negative voltage turn-off level to a threshold voltage of the GaN power device; when the gate voltage of the GaN power device is charged to the threshold voltage of the GaN power device, a current mirror charging module first turns on less than N of charging current mirror modules to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and turns on N charging current mirror modules to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to a zero level.