公开(公告)号：US10935491B2

公开(公告)日：2021-03-02

申请号：US16502624

申请日：2019-07-03

Applicant: University of Electronic Science and Technology of China

Inventor： Xiangdong Jiang ,  Ruikang Guo ,  Xiang Dong ,  Jimin Wang ,  Wei Li

IPC: G01N21/552 ,  G01N21/65 ,  G02B6/10 ,  G01N21/35 ,  G01N33/48 ,  G01N21/77 ,  G01N21/25

Abstract: A memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth includes a prism, a first non-conductive dielectric film layer, a metal film layer, a second non-conductive dielectric film layer and a conductive dielectric film layer, wherein the prism is configured to generate an ATR (Attenuated Total Reflections) attenuation evanescent wave; the first non-conductive dielectric film layer, the metal film layer, and the second non-conductive dielectric film layer define a sensing unit for achieving a basic sensing function; the metal film layer, the second non-conductive dielectric film layer and the conductive dielectric film layer define a memristive unit; a voltage applying device is provided between the first electrode and the second electrode for applying a bias voltage to the memristive unit so as to realize infrared memristive reconfiguration. A preparation method and a penetration depth tuning method of the memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth are also disclosed.

公开(公告)号：US20190323963A1

公开(公告)日：2019-10-24

申请号：US16502624

申请日：2019-07-03

Applicant: University of Electronic Science and Technology of China

Inventor： Xiangdong Jiang ,  Ruikang Guo ,  Xiang Dong ,  Jimin Wang ,  Wei Li

IPC: G01N21/552 ,  G01N21/65 ,  G02B6/10 ,  G01N21/77 ,  G01N21/35 ,  G01N33/48

Abstract: A memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth includes a prism unit, a first non-conductive dielectric film layer, a metal film layer, a second non-conductive dielectric film layer and a conductive dielectric film layer, wherein the prism unit is configured to generate an ATR (Attenuated Total Reflection) attenuation evanescent wave; the first non-conductive dielectric film layer, the metal film layer, and the second non-conductive dielectric iv film layer define a sensing unit for achieving a basic sensing function; the metal film layer, the second non-conductive dielectric film layer and the conductive dielectric film layer define a memristive unit; a voltage applying device is provided between the first electrode and the second electrode for applying a bias voltage to the memristive unit so as to realize infrared memristive reconfiguration. A preparation method and a is penetration depth tuning method of the memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth are also disclosed.

公开(公告)号：US20180277756A1

公开(公告)日：2018-09-27

申请号：US15989188

申请日：2018-05-25

Applicant: University of Electronic Science and Technology of China

Inventor： Wei Li ,  Yicheng Chen ,  Dongyang Li ,  Hao Zhong ,  Deen Gu ,  Yadong Jiang

IPC: H01L45/00 ,  G02B6/122 ,  G02B6/132 ,  G06N3/063

Abstract: An optical-readout synaptic device based on SiOxNy and a preparation method thereof are provided. The device includes a surface plasmonic waveguide and a memristor; the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNx dielectric layer and a first metal layer are successively arranged from top to bottom; the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom; the memristor is embedded in the surface plasmonic waveguide; and, the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNx dielectric layer of the surface plasmonic waveguide. The present invention realizes an optical-readout of synaptic weight and has incomparable advantages over a conventional electrical-readout synaptic device.

公开(公告)号：US10475996B2

公开(公告)日：2019-11-12

申请号：US15989188

申请日：2018-05-25

Applicant: University of Electronic Science and Technology of China

Inventor： Wei Li ,  Yicheng Chen ,  Dongyang Li ,  Hao Zhong ,  Deen Gu ,  Yadong Jiang

IPC: H01L45/00 ,  G02B6/122 ,  G02B6/132 ,  G06N3/063 ,  B82Y20/00 ,  G02B6/12

Abstract: An optical-readout synaptic device based on SiOxNy and a preparation method thereof are provided. The device includes a surface plasmonic waveguide and a memristor; the surface plasmonic waveguide has a vertical three-layer structure that a second metal layer, a SiNx dielectric layer and a first metal layer are successively arranged from top to bottom; the memristor has a vertical four-layer structure that a second electrode layer, a second resistive layer, a first resistive layer and a first electrode layer are successively arranged from top to bottom; the memristor is embedded in the surface plasmonic waveguide; and, the first resistive layer and the second resistive layer of the memristor serve as an optical signal transmission channel that is horizontally connected with the SiNx dielectric layer of the surface plasmonic waveguide. The present invention realizes an optical-readout of synaptic weight and has incomparable advantages over a conventional electrical-readout synaptic device.