公开(公告)号：US10935491B2

公开(公告)日：2021-03-02

申请号：US16502624

申请日：2019-07-03

Applicant: University of Electronic Science and Technology of China

Inventor： Xiangdong Jiang ,  Ruikang Guo ,  Xiang Dong ,  Jimin Wang ,  Wei Li

IPC: G01N21/552 ,  G01N21/65 ,  G02B6/10 ,  G01N21/35 ,  G01N33/48 ,  G01N21/77 ,  G01N21/25

Abstract: A memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth includes a prism, a first non-conductive dielectric film layer, a metal film layer, a second non-conductive dielectric film layer and a conductive dielectric film layer, wherein the prism is configured to generate an ATR (Attenuated Total Reflections) attenuation evanescent wave; the first non-conductive dielectric film layer, the metal film layer, and the second non-conductive dielectric film layer define a sensing unit for achieving a basic sensing function; the metal film layer, the second non-conductive dielectric film layer and the conductive dielectric film layer define a memristive unit; a voltage applying device is provided between the first electrode and the second electrode for applying a bias voltage to the memristive unit so as to realize infrared memristive reconfiguration. A preparation method and a penetration depth tuning method of the memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth are also disclosed.

公开(公告)号：US20190323963A1

公开(公告)日：2019-10-24

申请号：US16502624

申请日：2019-07-03

Applicant: University of Electronic Science and Technology of China

Inventor： Xiangdong Jiang ,  Ruikang Guo ,  Xiang Dong ,  Jimin Wang ,  Wei Li

IPC: G01N21/552 ,  G01N21/65 ,  G02B6/10 ,  G01N21/77 ,  G01N21/35 ,  G01N33/48

Abstract: A memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth includes a prism unit, a first non-conductive dielectric film layer, a metal film layer, a second non-conductive dielectric film layer and a conductive dielectric film layer, wherein the prism unit is configured to generate an ATR (Attenuated Total Reflection) attenuation evanescent wave; the first non-conductive dielectric film layer, the metal film layer, and the second non-conductive dielectric iv film layer define a sensing unit for achieving a basic sensing function; the metal film layer, the second non-conductive dielectric film layer and the conductive dielectric film layer define a memristive unit; a voltage applying device is provided between the first electrode and the second electrode for applying a bias voltage to the memristive unit so as to realize infrared memristive reconfiguration. A preparation method and a is penetration depth tuning method of the memristor-reconstructed near-infrared SPR biosensor with adjustable penetration depth are also disclosed.