公开(公告)号：US20180157283A1

公开(公告)日：2018-06-07

申请号：US15690290

申请日：2017-08-30

Applicant: University of Electronic Science and Technology of China

Inventor： Xin MING ,  Di GAO ,  Jiahao ZHANG ,  Xuan ZHANG ,  Xiuling WEI ,  Yao WANG ,  Zhuo WANG ,  Bo ZHANG

IPC: G05F1/575 ,  H03F3/45

CPC classification number: G05F1/575 ,  H03F3/4521 ,  H03F2203/45288

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.