公开(公告)号：US10673426B2

公开(公告)日：2020-06-02

申请号：US16455803

申请日：2019-06-28

Applicant: University of Electronic Science and Technology of China

Inventor： Xin Ming ,  Li Hu ,  Xuan Zhang ,  Su Pan ,  Chunqi Zhang ,  Yao Qin ,  Zhiwen Zhang ,  Yangli Xin ,  Zhuo Wang ,  Bo Zhang

IPC: H03K17/06 ,  H03K17/16 ,  H02M3/07

Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.