公开(公告)号：US10353417B2

公开(公告)日：2019-07-16

申请号：US16026081

申请日：2018-07-03

Applicant: University of Electronic Science and Technology of China ,  Institute of Electronic and Information Engineering of UESTC in Guangdong

Inventor： Xin Ming ,  Jiahao Zhang ,  Wenlin Zhang ,  Di Gao ,  Xuan Zhang ,  Zhuo Wang ,  Bo Zhang

IPC: G05F1/575 ,  H03F3/30 ,  H03F3/45 ,  H03F3/08

Abstract: A ripple pre-amplification based fully integrated LDO pertains to the technical field of power management. The positive input terminal of a transconductance amplifier is connected to a reference voltage Vref, and the negative input terminal of the transconductance amplifier is connected to the feedback voltage Vfb. The output terminal of the transconductance amplifier is connected to the negative input terminal of a transimpedance amplifier and the negative input terminal of an error amplifier. The positive input terminal of the transimpedance amplifier is connected to the ground GND, and the output terminal of the transimpedance amplifier is connected to the positive input terminal of the error amplifier. The gate terminal of the power transistor MP is connected to the output terminal of the error amplifier, the source terminal of the power transistor MP is connected to an input voltage VIN, and the drain terminal of the power transistor MP is grounded.

公开(公告)号：US10673426B2

公开(公告)日：2020-06-02

申请号：US16455803

申请日：2019-06-28

Applicant: University of Electronic Science and Technology of China

Inventor： Xin Ming ,  Li Hu ,  Xuan Zhang ,  Su Pan ,  Chunqi Zhang ,  Yao Qin ,  Zhiwen Zhang ,  Yangli Xin ,  Zhuo Wang ,  Bo Zhang

IPC: H03K17/06 ,  H03K17/16 ,  H02M3/07

Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.

公开(公告)号：US10019023B2

公开(公告)日：2018-07-10

申请号：US15690290

申请日：2017-08-30

Applicant: University of Electronic Science and Technology of China

Inventor： Xin Ming ,  Di Gao ,  Jiahao Zhang ,  Xuan Zhang ,  Xiuling Wei ,  Yao Wang ,  Zhuo Wang ,  Bo Zhang

IPC: G05F1/575 ,  H03F3/45

CPC classification number: G05F1/575 ,  H03F3/45183 ,  H03F3/4521 ,  H03F2200/456 ,  H03F2203/45288 ,  H03F2203/45318

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.