公开(公告)号：US20190371937A1

公开(公告)日：2019-12-05

申请号：US15774291

申请日：2016-09-17

Applicant: University of Electronic Science and Technology of China

Inventor： Min REN ,  Yuci LIN ,  Chi XIE ,  Zhiheng SU ,  Zehong LI ,  Jinping ZHANG ,  Wei GAO ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/423

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

公开(公告)号：US20180026143A1

公开(公告)日：2018-01-25

申请号：US15602107

申请日：2017-05-23

Applicant: University of Electronic Science and Technology of China

Inventor： Min REN ,  Yuci LIN ,  Huiping BAO ,  Lei LUO ,  Zehong LI ,  Bo ZHANG

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/15

CPC classification number: H01L29/872 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/66143

Abstract: The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the effective area of schottky junction is increased by forming the schottky junction in the trench located in the body of the device. Therefore, the current capacity of this novel schottky diode can be greatly improved. In addition, a super-junction structure is used to improve the device's reverse breakdown voltage and reduce the reverse leakage current. The super-junction schottky diode provided in the present invention can achieve a larger forward current, a lower on-resistance and a better reverse breakdown characteristic.