公开(公告)号：US11975979B2

公开(公告)日：2024-05-07

申请号：US17252360

申请日：2019-06-20

申请人： University of Houston System

发明人： Zhifeng Ren ,  Fei Tian ,  Gang Chen ,  Bai Song ,  Ke Chen ,  Li Shi ,  Xi Chen ,  Sean Sullivan ,  David Broido ,  Navaneetha Krishnan Ravichandran

IPC分类号： C30B29/40 ,  C01B35/04

CPC分类号： C01B35/04 ,  C30B29/40 ,  C01P2004/61 ,  C01P2006/32

摘要： A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.