公开(公告)号：US11256113B2

公开(公告)日：2022-02-22

申请号：US16324748

申请日：2017-08-09

Applicant: University of Southampton

Inventor： Kapil Debnath ,  Graham Reed ,  Shinichi Saito

IPC: G02B6/10 ,  G02F1/025 ,  G02F1/015

Abstract: A method of fabricating an optical structure comprises providing a layer of single crystal crystalline silicon supported on an insulating surface of a silicon substrate; using etching to remove part of the silicon layer and define a side wall which is non-parallel to the insulating surface of the substrate; forming a layer of insulating material over the side wall; forming a further layer of silicon over at least the insulating material; and removing the silicon of the further layer to a level of the layer of silicon such that the layer of insulating material occupies a slot between a portion of silicon in the layer and a portion of silicon in the further layer, a thickness of the layer of insulating material defining a width of the slot.