Sub-diffraction-limited patterning and imaging via multi-step photoswitching
    1.
    发明授权
    Sub-diffraction-limited patterning and imaging via multi-step photoswitching 有权
    亚衍射限制图案化和通过多步光切换成像

    公开(公告)号:US09063434B2

    公开(公告)日:2015-06-23

    申请号:US14152720

    申请日:2014-01-10

    CPC classification number: G03F7/7045 G03F7/0035 G03F7/0045 G03F7/0395

    Abstract: Sub-diffraction-limited patterning using a photoswitchable recording material is disclosed. A substrate can be provided with a photoresist in a first transition state. The photoresist can be configured for spectrally selective reversible transitions between at least two transition states based on a first wavelength band of illumination and a second wavelength band of illumination. An optical device can selectively expose the photoresist to a standing wave with a second wavelength in the second wavelength band to convert a section of the photoresist into a second transition state. The optical device or a substrate carrier securing the substrate can modify the standing wave relative to the substrate to further expose additional regions of the photoresist into the second transition state in a specified pattern. The method can further convert one of the first and second transition states of the photoresist into an irreversible transition state, while the other of the first and second transition states remains in a reversible transition state. The photoresist can be developed to remove the regions of the photoresist in the irreversible transition state.

    Abstract translation: 公开了使用可光开关的记录材料进行亚衍射限制图案化。 衬底可以设置有处于第一过渡状态的光致抗蚀剂。 光致抗蚀剂可以被配置用于基于照明的第一波长带和第二波长带照明的至少两个过渡状态之间的光谱选择性可逆转换。 光学装置可以选择性地将光致抗蚀剂暴露于第二波长带中的第二波长的驻波,以将光致抗蚀剂的一部分转化为第二过渡状态。 固定衬底的光学器件或衬底载体可以改变相对于衬底的驻波,以进一步将光致抗蚀剂的附加区域以特定的图案曝光到第二过渡状态。 该方法可以将光致抗蚀剂的第一和第二过渡态之一进一步转换成不可逆的过渡态,而第一和第二过渡态中的另一个保持在可逆转变状态。 可以显影光致抗蚀剂以去除处于不可逆过渡状态的光致抗蚀剂的区域。

Patent Agency Ranking