公开(公告)号：US10892071B1

公开(公告)日：2021-01-12

申请号：US16810231

申请日：2020-03-05

Applicant: VIKING TECH CORPORATION

Inventor： Cheng-Chung Chiu ,  Chi-Yu Lu

IPC: H01C7/00 ,  H01C17/075 ,  H01C1/142

Abstract: A thin film resistor element is provided with a tantalum nitride (TaN) layer on an upper surface of a substrate, a tantalum pentoxide (Ta2O5) layer disposed on the tantalum nitride layer, and two electrode layers separately disposed on the tantalum pentoxide layer or on both ends of the tantalum nitride layer and the tantalum pentoxide layer. The thin film resistor element of the present invention can reduce the oxidation rate of the resistor layer to maintain a constant resistance value at high temperatures generated during use.