Thin film resistor element
    1.
    发明授权

    公开(公告)号:US10892071B1

    公开(公告)日:2021-01-12

    申请号:US16810231

    申请日:2020-03-05

    Abstract: A thin film resistor element is provided with a tantalum nitride (TaN) layer on an upper surface of a substrate, a tantalum pentoxide (Ta2O5) layer disposed on the tantalum nitride layer, and two electrode layers separately disposed on the tantalum pentoxide layer or on both ends of the tantalum nitride layer and the tantalum pentoxide layer. The thin film resistor element of the present invention can reduce the oxidation rate of the resistor layer to maintain a constant resistance value at high temperatures generated during use.

    Micro-resistance structure with high bending strength, manufacturing method and semi-finished structure thereof

    公开(公告)号:US09728306B2

    公开(公告)日:2017-08-08

    申请号:US14819210

    申请日:2015-08-05

    CPC classification number: H01C1/028 H01C17/02

    Abstract: A micro-resistance structure with high bending strength is disclosed. The micro-resistance structure with high bending strength comprises a multi-layer metallic substrate; a patterned electrode layer disposed on a lower surface of the multi-layer metallic substrate; an encapsulant layer covering a portion of the multi-layer metallic substrate, wherein the encapsulant layer is substantially made of a flexible resin ink; and two external electrodes, which are electrically insulated from each other, covering the exposed portion of the multi-layer metallic substrate. The abovementioned structure is characterized in high bendability and applicable to wearable devices. A manufacturing method and a semi-finished structure of the micro-resistance structure with high bending strength are also disclosed herein.

    Resistor element
    3.
    发明授权

    公开(公告)号:US11205531B2

    公开(公告)日:2021-12-21

    申请号:US16929952

    申请日:2020-07-15

    Abstract: The present invention provides a structure of resistor element, which comprises a protective layer around electrodes to elongate the path of corrosion when gaseous water or sulfur leaking in. Therefore, the protective layer structure can elongate the life of the resistor element.

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