Micro-resistance structure with high bending strength, manufacturing method and semi-finished structure thereof

    公开(公告)号:US09728306B2

    公开(公告)日:2017-08-08

    申请号:US14819210

    申请日:2015-08-05

    CPC classification number: H01C1/028 H01C17/02

    Abstract: A micro-resistance structure with high bending strength is disclosed. The micro-resistance structure with high bending strength comprises a multi-layer metallic substrate; a patterned electrode layer disposed on a lower surface of the multi-layer metallic substrate; an encapsulant layer covering a portion of the multi-layer metallic substrate, wherein the encapsulant layer is substantially made of a flexible resin ink; and two external electrodes, which are electrically insulated from each other, covering the exposed portion of the multi-layer metallic substrate. The abovementioned structure is characterized in high bendability and applicable to wearable devices. A manufacturing method and a semi-finished structure of the micro-resistance structure with high bending strength are also disclosed herein.

    Resistor component
    2.
    发明授权
    Resistor component 有权
    电阻元件

    公开(公告)号:US09373430B2

    公开(公告)日:2016-06-21

    申请号:US13893423

    申请日:2013-05-14

    CPC classification number: H01C1/028 H01C1/04 H01C1/148 H01C7/003

    Abstract: A resistor component is provided, including a ceramic bar having a film applied thereon, a protection layer formed on the film in a middle portion of the ceramic bar, an end plating layer formed on the film at two ends of the ceramic bar, an insulation layer formed on the protection layer, and a color coded marking formed on the insulation layer that indicates the resistance of the resistor component. The end plating layer is formed by a barrel plating method and includes copper, tin, nickel and a combination thereof. The resistor component thus has a low cost and is manufactured by a simple process, simultaneously avoids the occurrence of pores or incompletely sealed join that may be caused by the prior method. Therefore the resistor component has high reliability.

    Abstract translation: 提供一种电阻器部件,包括其上涂覆有膜的陶瓷棒,在陶瓷棒的中间部分中形成在膜上的保护层,在陶瓷棒的两端形成在膜上的端电镀层,绝缘体 形成在保护层上的层,以及形成在绝缘层上的指示电阻器部件的电阻的颜色编码标记。 端镀层通过滚镀法形成,包括铜,锡,镍及其组合。 因此,电阻器部件成本低并且通过简单的工艺制造,同时避免了由现有方法引起的孔或不完全密封的连接的发生。 因此,电阻器组件具有高可靠性。

    Micro-Resistance Structure with High Bending Strength, Manufacturing Method and Semi-Finished Structure Thereof
    3.
    发明申请
    Micro-Resistance Structure with High Bending Strength, Manufacturing Method and Semi-Finished Structure Thereof 有权
    具有高弯曲强度的微电阻结构,制造方法和半成品结构

    公开(公告)号:US20160064122A1

    公开(公告)日:2016-03-03

    申请号:US14819210

    申请日:2015-08-05

    CPC classification number: H01C1/028 H01C17/02

    Abstract: A micro-resistance structure with high bending strength is disclosed. The micro-resistance structure with high bending strength comprises a multi-layer metallic substrate; a patterned electrode layer disposed on a lower surface of the multi-layer metallic substrate; an encapsulant layer covering a portion of the multi-layer metallic substrate, wherein the encapsulant layer is substantially made of a flexible resin ink; and two external electrodes, which are electrically insulated from each other, covering the exposed portion of the multi-layer metallic substrate. The abovementioned structure is characterized in high bendability and applicable to wearable devices. A manufacturing method and a semi-finished structure of the micro-resistance structure with high bending strength are also disclosed herein.

    Abstract translation: 公开了具有高弯曲强度的微电阻结构。 具有高抗弯强度的微电阻结构包括多层金属基底; 设置在所述多层金属基板的下表面上的图案化电极层; 覆盖所述多层金属基材的一部分的密封剂层,其中所述密封剂层基本上由柔性树脂油墨制成; 和彼此电绝缘的两个外部电极,覆盖多层金属基板的露出部分。 上述结构的特征在于高弯曲性,适用于可穿戴装置。 本文还公开了具有高弯曲强度的微电阻结构的制造方法和半成品结构。

    Carrier and Package Having the Carrier
    4.
    发明申请
    Carrier and Package Having the Carrier 有权
    承运人和包裹承运人

    公开(公告)号:US20150305201A1

    公开(公告)日:2015-10-22

    申请号:US14461808

    申请日:2014-08-18

    Abstract: A carrier is disclosed, including: a main body having a first surface and a second surface opposing the first surface; a conductive part formed on the first surface of the main body; and a plurality of heat conductors that are not in contact with the conductive part and penetrate the main body to connect the first surface with the second surface. Therefore, heat generated by electronic elements can be effectively dissipated outside to improve the functionality and lifetime of electronic elements.

    Abstract translation: 公开了一种载体,包括:具有与第一表面相对的第一表面和第二表面的主体; 形成在主体的第一表面上的导电部分; 以及与导电部不接触并穿透主体以将第一表面与第二表面连接的多个热导体。 因此,电子元件产生的热可以有效地消散在外部,以改善电子元件的功能和寿命。

    RESISTOR ELEMENT
    5.
    发明申请
    RESISTOR ELEMENT 审中-公开

    公开(公告)号:US20200185132A1

    公开(公告)日:2020-06-11

    申请号:US16296723

    申请日:2019-03-08

    Inventor: SHUN-HO KUO

    Abstract: A resistor element is provided, comprising a substrate including an upper surface and lower surface opposite to each other; a pair of electrodes separately disposed on the upper surface; at least one first groove extended from the upper surface to lower surface and defined by first side walls and a first bottom surface, wherein the depth from the upper surface of the substrate to the first bottom surface is a first depth; and a resistant layer disposed on the upper surface and electrical connected to the pair electrodes. The resistant layer covers the first side wall, the first bottom surface and part of the upper surface. The substrate with grooves increases the current path of the resistant layer, so that the resistor element having higher resistance can be obtained.

    Method of electroplating and depositing metal
    6.
    发明授权
    Method of electroplating and depositing metal 有权
    电镀和沉积金属的方法

    公开(公告)号:US09204555B2

    公开(公告)日:2015-12-01

    申请号:US13623480

    申请日:2012-09-20

    Abstract: A method of electroplating and depositing metal includes: providing an insulation substrate formed with conductive through holes; forming a first conductive layer on a first surface of the insulation substrate and forming a resist layer on a first portion of the first conductive layer, leaving a second portion of the first conductive layer uncovered by the resist layer as a to-be-plated area; disposing the insulation substrate in a first electroplating solution and depositing a first metal layer on the to-be-plated area; removing the resist layer and the portion of the first conductive layer; forming a second conductive layer on a second surface of the insulation substrate; forming a mask layer on the second conductive layer; disposing the insulation substrate in a second electroplating solution and depositing a second metal layer on the first metal layer of the to-be-plated area; and removing the mask layer and the second conductive layer.

    Abstract translation: 一种电镀和沉积金属的方法包括:提供形成有导电通孔的绝缘基板; 在所述绝缘基板的第一表面上形成第一导电层,并在所述第一导电层的第一部分上形成抗蚀剂层,留下未被所述抗蚀剂层覆盖的所述第一导电层的第二部分作为被镀覆区域 ; 将所述绝缘基板设置在第一电镀溶液中并在所述被镀区域上沉积第一金属层; 去除所述抗蚀剂层和所述第一导电层的所述部分; 在所述绝缘基板的第二表面上形成第二导电层; 在所述第二导电层上形成掩模层; 将所述绝缘基板设置在第二电镀液中,并在所述被镀区域的所述第一金属层上沉积第二金属层; 以及去除掩模层和第二导电层。

    RESISTOR
    7.
    发明公开
    RESISTOR 审中-公开

    公开(公告)号:US20240242860A1

    公开(公告)日:2024-07-18

    申请号:US18153830

    申请日:2023-01-12

    CPC classification number: H01C1/02

    Abstract: The present invention proposes a resistor with two barrier layers covered by a protection layer, at both sides of the resistor to resist the moisture and sulphide penetration from both sides. The barrier can enhance the anti-corrosion ability of the resister. For a metallic barrier, a distance to the resistance layer and the internal electrode layer is necessary.

    RESISTOR ELEMENT
    8.
    发明申请

    公开(公告)号:US20210304924A1

    公开(公告)日:2021-09-30

    申请号:US16929952

    申请日:2020-07-15

    Abstract: The present invention provides a structure of resistor element, which comprises a protective layer around electrodes to elongate the path of corrosion when gaseous water or sulfur leaking in. Therefore, the protective layer structure can elongate the life of the resistor element.

    Thin film resistor element
    9.
    发明授权

    公开(公告)号:US10892071B1

    公开(公告)日:2021-01-12

    申请号:US16810231

    申请日:2020-03-05

    Abstract: A thin film resistor element is provided with a tantalum nitride (TaN) layer on an upper surface of a substrate, a tantalum pentoxide (Ta2O5) layer disposed on the tantalum nitride layer, and two electrode layers separately disposed on the tantalum pentoxide layer or on both ends of the tantalum nitride layer and the tantalum pentoxide layer. The thin film resistor element of the present invention can reduce the oxidation rate of the resistor layer to maintain a constant resistance value at high temperatures generated during use.

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