公开(公告)号：US20250021741A1

公开(公告)日：2025-01-16

申请号：US18770525

申请日：2024-07-11

Applicant: Vijay Kumar ,  Rajay Kumar

Inventor： Vijay Kumar ,  Rajay Kumar

IPC: G06F40/103 ,  G06F16/34 ,  G06F40/169

Abstract: Aspects of the disclosed technology provide solutions for generating summaries of a source text based on user specified content parameters. In some aspects, a process of the disclosed technology can include steps for receiving a first source text, the source text having a first textual attribute, receiving a content parameter, providing the source text and the content parameter to a machine-learning (ML) model, and receiving, from the ML model, a proto text based on the source text and the content parameter, wherein the proto text has second textual attribute, and wherein the second textual attribute is different than the first textual attribute. Systems and machine-readable media are also provided.

公开(公告)号：US20110136304A1

公开(公告)日：2011-06-09

申请号：US12814254

申请日：2010-06-11

Applicant: Eric W. Wong ,  Brian D. Hunt ,  Rajay Kumar ,  Chao Li

Inventor： Eric W. Wong ,  Brian D. Hunt ,  Rajay Kumar ,  Chao Li

IPC: H01L21/338 ,  B82Y40/00

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

Abstract: Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.

Abstract translation: 技术用于制造碳纳米管器件。 这些技术改进了不需要的纳米管的选择性去除，例如金属碳纳米管，同时留下了期望的纳米管，如半导体碳纳米管。 在第一种技术中，狭缝图案化用于切割或断裂碳纳米管具有比期望更长的长度。 通过改变开槽的宽度和间距，可以去除纳米管的一定长度或更大。 一旦纳米管的长度被限制在一定或预期的范围内，去除纳米管的电击穿方法更有效。 在第二种技术中，在一个电极（例如漏极或源极）处产生肖特基势垒。 这种肖特基势垒有助于防止在使用电击穿方法时无意中去除所需的纳米管。 第一和第二技术可以单独使用或者彼此组合使用。