Method producing an SNS superconducting junction with weak link barrier
    3.
    发明授权
    Method producing an SNS superconducting junction with weak link barrier 失效
    产生具有弱连接屏障的SNS超导结的方法

    公开(公告)号:US5945383A

    公开(公告)日:1999-08-31

    申请号:US854124

    申请日:1992-03-19

    Applicant: Brian D. Hunt

    Inventor: Brian D. Hunt

    CPC classification number: H01L39/2496 Y10S505/702 Y10S505/732

    Abstract: A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800.degree. C. A weak link barrier layer of a nonsuperconducting film of N--YBaCuO is deposited over the electrode at a temperature range of 520.degree. C. to 540.degree. C. at a lower deposition rate. Subsequently, a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800.degree. C. The weak link barrier layer has a thickness of approximately 50 .ANG. and the SNS element can be constructed to provide an edge geometry junction.

    Abstract translation: 提供了制造高温超导体约瑟夫逊元件和改进的SNS弱连接屏障元件的方法。 YBaCuO超导电极膜在大约800℃的温度下沉积在基板上.NNBaCuO的非超导薄膜的弱连接阻挡层沉积在电极上,在520℃至540℃的温度范围内 以较低的沉积速率。 随后,YBaCuO的超导对电极膜层在约800℃下沉积在弱连接阻挡层上。弱连接阻挡层的厚度约为50,SNS元件可构造成提供边缘几何结 。

    Low-inductance HTS interconnects and Josephson junctions using
slot-defined SNS edge junctions
    4.
    发明授权
    Low-inductance HTS interconnects and Josephson junctions using slot-defined SNS edge junctions 失效
    低电感HTS互连和约瑟夫逊结使用槽定义的SNS边缘连接点

    公开(公告)号:US5793056A

    公开(公告)日:1998-08-11

    申请号:US802982

    申请日:1997-02-21

    CPC classification number: H01L39/225

    Abstract: A technique for defining the active area of a high-T.sub.c superconductor Josephson junction uses an epitaxial slotted insulator patterned over the edge of the superconductor thin film-insulator bilayer. The superconductor/normal-metal/superconductor edge junction formed between the slotted insulator has a small active area. The counter electrode provided as an interconnect of the junction can therefore be wider than the active area of the edge junction since it can overlap onto the patterned slotted insulator. The use of the slotted insulator enables fabrication of junctions having resistances and critical currents in the desired range for high-T.sub.c superconductor circuits while enabling the use of wide, low inductance interconnects.

    Abstract translation: 用于定义高Tc超导体约瑟夫逊结的有源面积的技术使用在超导体薄膜 - 绝缘体双层的边缘上图案化的外延开槽绝缘体。 在开槽绝缘体之间形成的超导体/正常金属/超导体边缘连接器具有小的有效面积。 因此,作为结的互连提供的对电极可以比边缘连接的有源区域宽,因为它可以重叠到图案化的有槽绝缘体上。 使用开槽绝缘体能够制造具有在高Tc超导体电路的期望范围内的电阻和临界电流的结,同时能够使用宽的低电感互连。

    Method for producing edge geometry superconducting tunnel junctions
utilizing an NbN/MgO/NbN thin film structure
    5.
    发明授权
    Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure 失效
    利用NbN / MgO / NbN薄膜结构生产边缘几何超导隧道结的方法

    公开(公告)号:US5100694A

    公开(公告)日:1992-03-31

    申请号:US642765

    申请日:1991-01-18

    CPC classification number: H01L39/2493

    Abstract: Disclosed is a method for fabricating an edge geometry superconducting tunnel junction device comprising two niobium nitride superconducting electrodes (14,28) and a magnesium oxide tunnel barrier (24) sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250.degree. to 500.degree. C. for improved quality of the electrode.

    Abstract translation: 公开了一种用于制造边缘几何形状的超导隧道结器件的方法,该器件包括夹在两个电极之间的两个氮化铌超导电极(14,28)和氧化镁隧道势垒(24)。 NbN电极优选溅射沉积,第一NbN电极沉积在保持在约250℃至500℃的绝缘衬底上,以改善电极的质量。

    Carbon nanobimorph actuator and sensor
    8.
    发明授权
    Carbon nanobimorph actuator and sensor 失效
    碳纳米复合致动器和传感器

    公开(公告)号:US06756795B2

    公开(公告)日:2004-06-29

    申请号:US10052302

    申请日:2002-01-18

    Abstract: A nanomechanical actuator/oscillator device and system are provided. The nanomechanical actuator/oscillator device comprising nanobimorphs, such as nanotubes, designed such that inducing a difference in charge density between the tubes (e.g. by biasing one tube positive with respect to the other with sufficient tube-to-tube contact resistance) induces lateral movement in the end of the bimorph, forming a nanoscale resonator, as well as a force sensor when operated in an inverse mode. A method of producing a novel nanobimorph structure with integrated electrodes is also provided.

    Abstract translation: 提供了纳米机械致动器/振荡器装置和系统。 纳米机械致动器/振荡器装置包括诸如纳米管的纳米等离子体,被设计为引起管之间的电荷密度差异(例如,通过使一个管相对于另一管相对于另一管以足够的管与管接触电阻而偏置)引起横向运动 在双压电晶片的末端,形成纳米级谐振器,以及当以反向模式操作时的力传感器。 还提供了一种制备具有集成电极的新型纳米双相结构的方法。

    Carbon nanotube array RF filter
    9.
    发明授权
    Carbon nanotube array RF filter 失效
    碳纳米管阵列RF滤波器

    公开(公告)号:US06737939B2

    公开(公告)日:2004-05-18

    申请号:US10113250

    申请日:2002-04-01

    Abstract: A tunable nanomechanical resonator system comprising an array of nanofeatures, such as nanotubes, where the nanofeatures are in signal communication with means for inducing a difference in charge density in the nanofeature such that the mechanical resonant frequency of the nanofeature can be tuned, and where the nanofeature is in signal communication with a waveguide or other RF bias conduit such that an RF signal having a frequency corresponding to the mechanical resonant frequency of the array will couple to the array thereby inducing resonant motion in the array of nanofeatures, and subsequently coupling to an output waveguide, forming a nanoscale RF filter is provided. A method of producing a nanoscale RF filter structure controllably positioned and oriented with a waveguide and integrated electrodes is also provided.

    Abstract translation: 一种可调谐纳米机械谐振器系统,其包括诸如纳米管的纳米尺度阵列,其中纳米尺度与用于诱导纳米级电荷密度差异的装置进行信号通信,使得可以调谐纳米尺度的机械共振频率, 纳米尺度与波导或其它RF偏压导管信号通信,使得具有对应于阵列的机械共振频率的频率的RF信号将耦合到阵列,从而在纳米尺度的阵列中引起谐振运动,并且随后耦合到 输出波导,形成纳米级RF滤波器。 还提供了一种制造可控地定位和定向为具有波导和集成电极的纳米尺度RF滤波器结构的方法。

    Development of a gel-free molecular sieve based on self-assembled nano-arrays
    10.
    发明授权
    Development of a gel-free molecular sieve based on self-assembled nano-arrays 失效
    基于自组装纳米阵列开发无凝胶分子筛

    公开(公告)号:US06685810B2

    公开(公告)日:2004-02-03

    申请号:US09791493

    申请日:2001-02-22

    CPC classification number: G01N27/44773 G01N27/44704 Y10S977/88

    Abstract: A device for utilizing a non-gel self-assembled nano-feature array molecular sieve for analyzing molecules is provided. The molecular sieve device comprises an ordered array of self-assembled nano-features which function as a molecular sieve to separate molecules based on a suitable characteristic. A system for integrating the non-gel ordered self-assembled nano-feature array molecular sieve of this invention into a device for separating molecules based on a characteristic and a method for separating a wide range of molecules using the non-gel ordered self-assembled nano-feature array molecular sieve of the invention are also provided.

    Abstract translation: 提供了一种利用非凝胶自组装纳米特征阵列分子筛分析分子的装置。 分子筛装置包括自组装纳米特征的有序阵列,其作为基于合适特征分离分子的分子筛。 用于将本发明的非凝胶订购的自组装纳米特征阵列分子筛整合到基于特征分离分子的装置和使用非凝胶有序自组装分离多种分子的方法的系统 还提供了本发明的纳米特征阵列分子筛。

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