公开(公告)号：US20250126834A1

公开(公告)日：2025-04-17

申请号：US18486880

申请日：2023-10-13

Applicant: Virginia Tech Intellectual Properties, Inc.

Inventor： Yuhao Zhang ,  Yuan Qin

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/808 ,  H01L29/861

Abstract: A device may include a substrate. A device may include a first semiconductor region of a first conductivity type having a first doping concentration, the first semiconductor region including a base surface, a buffer region positioned between the substrate and the first semiconductor region. A device may include a second semiconductor region of the first conductivity type and having a second doping concentration that is less than the first doping concentration, the second semiconductor region positioned over the base surface of the first semiconductor region. A device may include at least one first device terminal positioned over the base surface of the first semiconductor region. A device may include a third semiconductor region of a second conductivity type disposed over at least one sidewall of the second semiconductor region.