公开(公告)号：US20250126834A1

公开(公告)日：2025-04-17

申请号：US18486880

申请日：2023-10-13

Applicant: Virginia Tech Intellectual Properties, Inc.

Inventor： Yuhao Zhang ,  Yuan Qin

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/808 ,  H01L29/861

Abstract: A device may include a substrate. A device may include a first semiconductor region of a first conductivity type having a first doping concentration, the first semiconductor region including a base surface, a buffer region positioned between the substrate and the first semiconductor region. A device may include a second semiconductor region of the first conductivity type and having a second doping concentration that is less than the first doping concentration, the second semiconductor region positioned over the base surface of the first semiconductor region. A device may include at least one first device terminal positioned over the base surface of the first semiconductor region. A device may include a third semiconductor region of a second conductivity type disposed over at least one sidewall of the second semiconductor region.

公开(公告)号：US12176442B2

公开(公告)日：2024-12-24

申请号：US17519898

申请日：2021-11-05

Applicant: Virginia Tech Intellectual Properties, Inc.

Inventor： Yuhao Zhang ,  Ming Xiao

IPC: H01L29/872 ,  H01L29/20 ,  H01L29/205 ,  H01L29/24

Abstract: A diode includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge; a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the semiconductor region, the material of the second conductivity type having a net-charge in a depletion region that is substantially equal to the net-charge of the at least one two-dimensional channel in the semiconductor region when the diode is under reverse bias; an anode material in contact with at least a portion of the at least one two-dimensional channel and at least a portion of the material of the second conductivity type; and a cathode material in contact with the at least one two-dimensional carrier channel.

公开(公告)号：US11171203B2

公开(公告)日：2021-11-09

申请号：US16881846

申请日：2020-05-22

Applicant: Virginia Tech Intellectual Properties, Inc.

Inventor： Yuhao Zhang

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/40 ,  H01L29/205

Abstract: A variety of high electron mobility transistor structures are provided having charge compensation regions that can extend below the gate electrode through the barrier layer and at least partially through the III-V semiconductor layer. The charge compensation regions include a p-type semiconductor or oxide. In some aspects, the charge compensation regions extend vertically through said barrier layer into said channel layer, wherein said charge-compensation regions are doped with p-type dopants and are placed aside the 2DEG channel and do not overlap vertically with the 2DEG channel. In some aspects, at least a portion of the charge compensation regions extend from below the gate electrode to make Ohmic contact with the source electrode. In some aspects, by extending the charge compensation regions from below the gate electrode and closer to the source and drain electrodes, the HEFTs can demonstrate avalanche characteristics. The HEMTs can include any suitable III-V semiconductor, and in particular can include a GaN semiconductor.

公开(公告)号：US20200373383A1

公开(公告)日：2020-11-26

申请号：US16881846

申请日：2020-05-22

Applicant: Virginia Tech Intellectual Properties, Inc.

Inventor： Yuhao Zhang

IPC: H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/778

Abstract: A variety of high electron mobility transistor structures are provided having charge compensation regions that can extend below the gate electrode through the barrier layer and at least partially through the III-V semiconductor layer. The charge compensation regions include a p-type semiconductor or oxide. In some aspects, the charge compensation regions extend vertically through said barrier layer into said channel layer, wherein said charge-compensation regions are doped with p-type dopants and are placed aside the 2DEG channel and do not overlap vertically with the 2DEG channel. In some aspects, at least a portion of the charge compensation regions extend from below the gate electrode to make Ohmic contact with the source electrode. In some aspects, by extending the charge compensation regions from below the gate electrode and closer to the source and drain electrodes, the HEFTs can demonstrate avalanche characteristics. The HEMTs can include any suitable III-V semiconductor, and in particular can include a GaN semiconductor.