IMAGE SENSOR
    2.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20230154956A1

    公开(公告)日:2023-05-18

    申请号:US17834706

    申请日:2022-06-07

    IPC分类号: H01L27/146

    摘要: An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.

    UNDER-DISPLAY CAMERA SYSTEM AND OPERATING METHOD THEREOF

    公开(公告)号:US20230352503A1

    公开(公告)日:2023-11-02

    申请号:US17731158

    申请日:2022-04-27

    IPC分类号: H01L27/146 H04N5/374 G06T7/13

    摘要: An operating method of an under-display camera system includes: providing a raw data by a pixel array; generating, by a plurality of color filters respectively disposed on a plurality of first photodiodes of the pixel array, a color information in accordance with the raw data; generating, by a plurality of first narrowband filters respectively disposed on a plurality of second photodiodes of the pixel array, a first narrowband information in accordance with the raw data, wherein a spectrum linewidth of the plurality of first narrowband filters is in a range from 5 nm to 70 nm; reconstructing an edge information from the first narrowband information based on one of a plurality of diffraction patterns provided by a database unit of a point spread function; and obtaining an image by combining the edge information with the color information.

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230317751A1

    公开(公告)日:2023-10-05

    申请号:US17710238

    申请日:2022-03-31

    IPC分类号: H01L27/146

    摘要: The image sensor includes a semiconductor substrate, a pillar array layer, a planar layer, and a microlens layer. The semiconductor substrate includes a first photodiode and a second photodiode. The pillar array layer is disposed on the semiconductor substrate, the pillar array layer includes a first pillar array disposed above the first photodiode and a second pillar array disposed above the second photodiode. The first pillar array includes a plurality of first pillar structures, the second pillar array includes a plurality of second pillar structures, all the first pillar structures have a first height, and all the second pillar structures have a second height. The planar layer is disposed on the pillar array layer. The microlens layer is disposed on the planar layer.

    OPTICAL DEVICE
    5.
    发明公开
    OPTICAL DEVICE 审中-公开

    公开(公告)号:US20230170361A1

    公开(公告)日:2023-06-01

    申请号:US17707891

    申请日:2022-03-29

    IPC分类号: H01L27/146

    CPC分类号: H01L27/14621 H01L27/14645

    摘要: The optical device includes a first photodiode, a second photodiode, and a hybrid absorber. The hybrid absorber is disposed above the first photodiode and the second photodiode. The hybrid absorber includes a color filter layer and a plurality of metal-insulator-metal structures. The color filter layer includes a first color filter disposed on the first photodiode and a second color filter disposed on the second photodiode, in which the first color filter is different from the second color filter. The plurality of metal-insulator-metal structures are disposed above the first photodiode and free of disposed above the second photodiode.