公开(公告)号：US20100003769A1

公开(公告)日：2010-01-07

申请号：US12168414

申请日：2008-07-07

Applicant: Vladimir KUZNETSOV

Inventor： Vladimir KUZNETSOV

IPC: H01L21/66

CPC classification number: H01L21/67265 ,  H01L21/6838

Abstract: Disclosed is a method involving repeatedly measuring a pressure within a flow of processing gas that is provided in a semiconductor processing apparatus for treatment of a semiconductor substrate, such as a semiconductor wafer. The flow of processing gas is made to extend between a surface of the substrate and a surface of a processing body. From the pressure measurements the occurrence of an event that is related to a variation in the position of the substrate's surface relative to the surface of the processing body is determined.

Abstract translation: 公开了一种重复测量在用于处理半导体晶片等半导体衬底的半导体处理装置中的处理气体流中的压力的​​方法。 使处理气体的流动在基板的表面和加工体的表面之间延伸。 从压力测量中确定与衬底表面相对于处理体的表面的位置的变化相关的事件的发生。

公开(公告)号：US20090310648A1

公开(公告)日：2009-12-17

申请号：US12138848

申请日：2008-06-13

Applicant: Ernst H.A. GRANNEMAN ,  Pascal VERMONT ,  Vladimir KUZNETSOV

Inventor： Ernst H.A. GRANNEMAN ,  Pascal VERMONT ,  Vladimir KUZNETSOV

IPC: G01K5/32 ,  C23C16/00 ,  C23C16/52

CPC classification number: G01K5/32 ,  G01K5/28

Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract translation: 该出版物公开了一种用于确定衬底的温度的方法，包括：提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底，使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流，所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率，使用沿着气体通道的压降，基板的壁温度和温度之间的预定关系，从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。