公开(公告)号：US08002463B2

公开(公告)日：2011-08-23

申请号：US12138848

申请日：2008-06-13

Applicant: Ernst H. A. Granneman ,  Pascal Vermont ,  Vladimir Kuznetsov

Inventor： Ernst H. A. Granneman ,  Pascal Vermont ,  Vladimir Kuznetsov

IPC: G01K13/02 ,  B05C11/10 ,  H01L21/00 ,  G01R31/00

CPC classification number: G01K5/32 ,  G01K5/28

Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract translation: 该出版物公开了一种用于确定衬底的温度的方法，包括：提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底，使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流，所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率，使用沿着气体通道的压降，基板的壁温度和温度之间的预定关系，从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。

公开(公告)号：US20060141808A1

公开(公告)日：2006-06-29

申请号：US11356697

申请日：2006-02-17

Applicant: Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

Inventor： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont ,  Herbert Terhorst ,  Gert-Jan Snijders

IPC: H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67784 ,  H01L21/6838

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract translation: 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到​​所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。

公开(公告)号：US20090310648A1

公开(公告)日：2009-12-17

申请号：US12138848

申请日：2008-06-13

Applicant: Ernst H.A. GRANNEMAN ,  Pascal VERMONT ,  Vladimir KUZNETSOV

Inventor： Ernst H.A. GRANNEMAN ,  Pascal VERMONT ,  Vladimir KUZNETSOV

IPC: G01K5/32 ,  C23C16/00 ,  C23C16/52

CPC classification number: G01K5/32 ,  G01K5/28

Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract translation: 该出版物公开了一种用于确定衬底的温度的方法，包括：提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底，使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流，所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率，使用沿着气体通道的压降，基板的壁温度和温度之间的预定关系，从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。

公开(公告)号：US20050095873A1

公开(公告)日：2005-05-05

申请号：US10700298

申请日：2003-10-31

Applicant: Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont

Inventor： Ernst Granneman ,  Vladimir Kuznetsov ,  Xavier Pages ,  Pascal Vermont

IPC: H01L21/00 ,  H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01L21/324 ,  H01L21/6838

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract translation: 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到​​所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。