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公开(公告)号:US20180065858A1
公开(公告)日:2018-03-08
申请号:US15810331
申请日:2017-11-13
申请人: WACKER CHEMIE AG
发明人: Goeran KLOSE , Heinz KRAUS , Franz SALZEDER
IPC分类号: C01B33/035
CPC分类号: C01B33/035 , B01J12/00 , B01J12/02 , B01J19/24
摘要: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.
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公开(公告)号:US20160167971A1
公开(公告)日:2016-06-16
申请号:US14907932
申请日:2014-07-10
申请人: WACKER CHEMIE AG
发明人: Goeran KLOSE , Heinz KRAUS , Franz SALZEDER
IPC分类号: C01B33/035
CPC分类号: C01B33/035
摘要: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.
摘要翻译: 通过进行基本上平行于视镜的反应器端表面的第一吹扫气流,并且在与观察窗表面成一定角度的位置在导光管内进行第二吹扫气流,从而减少用于CVD沉积硅的反应器中的视镜上的沉积 朝向反应堆的内部。
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