公开(公告)号：US20160167971A1

公开(公告)日：2016-06-16

申请号：US14907932

申请日：2014-07-10

Applicant: WACKER CHEMIE AG

Inventor： Goeran KLOSE ,  Heinz KRAUS ,  Franz SALZEDER

IPC: C01B33/035

CPC classification number: C01B33/035

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

Abstract translation: 通过进行基本上平行于视镜的反应器端表面的第一吹扫气流，并且在与观察窗表面成一定角度的位置在导光管内进行第二吹扫气流，从而减少用于CVD沉积硅的反应器中的视镜上的沉积 朝向反应堆的内部。

公开(公告)号：US20180065858A1

公开(公告)日：2018-03-08

申请号：US15810331

申请日：2017-11-13

Applicant: WACKER CHEMIE AG

Inventor： Goeran KLOSE ,  Heinz KRAUS ,  Franz SALZEDER

IPC: C01B33/035

CPC classification number: C01B33/035 ,  B01J12/00 ,  B01J12/02 ,  B01J19/24

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

公开(公告)号：US20160297684A1

公开(公告)日：2016-10-13

申请号：US14777643

申请日：2014-02-26

Applicant: WACKER CHEMIE AG

Inventor： Goeran KLOSE ,  Heinz KRAUS ,  Tobias WEISS

IPC: C01B33/035 ,  C23C16/455

CPC classification number: C01B33/035 ,  C23C16/455

Abstract: The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.

Abstract translation: 通过将反应气体至少部分地通过沉积反应器的垂直壁中的喷嘴以与反应器壁成0°至45°的角度朝向底部供应反应气体而将多晶硅沉积到加热的丝杆上 反应堆板。