公开(公告)号：US20170306477A1

公开(公告)日：2017-10-26

申请号：US15526131

申请日：2015-11-06

Applicant: Wacker Chemie AG

Inventor： Heinz KRAUS ,  Christian KUTZA ,  Dominik RENNSCHMID

IPC: C23C16/24 ,  C01B33/035 ,  C23C16/44 ,  C23C16/46

Abstract: Siemens CVD reactors are sealed in a manner which facilitates long production campaigns without refurbishing the seals, by the use of at least two seals, and an electrically insulating member having a thermal conductivity of from 1 to 200 W/mK, a sustained use temperature of at least 400° C., and a resistivity of more than 1-109 Ωcm.

公开(公告)号：US20160045886A1

公开(公告)日：2016-02-18

申请号：US14778815

申请日：2014-02-26

Applicant: WACKER CHEMIE AG

Inventor： Heinz KRAUS ,  Andreas HEGEN ,  Christian KUTZA

IPC: B01J19/00 ,  C23C16/24 ,  C01B33/035

CPC classification number: B01J19/0073 ,  B01J19/087 ,  B01J2219/0807 ,  B01J2219/0837 ,  B01J2219/0875 ,  C01B33/035 ,  C23C16/24 ,  H01J37/32477 ,  H01J37/32513 ,  Y02P20/149

Abstract: Electrode support seals in a Siemens reactor for the deposition of polycrystalline silicon are protected against thermal stress and degradation, and shorting by falling fragments is prevented by shielding having a high resistivity and also a high thermal conductivity.

Abstract translation: 用于沉积多晶硅的西门子反应器中的电极支撑密封件被保护免受热应力和降解，并且通过具有高电阻率和高导热性的屏蔽防止由碎片产生的短路。

公开(公告)号：US20180298521A1

公开(公告)日：2018-10-18

申请号：US15768348

申请日：2016-10-11

Applicant: Wacker Chemie AG

Inventor： Heinz KRAUS ,  Christian KUTZA

IPC: C30B29/06 ,  C01B33/035 ,  H01L21/02

Abstract: The yield and quality of polysilicon rods produced in the Siemens process are increased by preventing pieces of silicon too large to be removed by flushing with gas from entering reaction gas inlets and offgas outlets by means of protective elements installed in the inlets and/or outlets.

公开(公告)号：US20170349443A1

公开(公告)日：2017-12-07

申请号：US15537206

申请日：2015-12-18

Applicant: Wacker Chemie AG

Inventor： Tobias WEISS ,  Heinz KRAUS

IPC: C01B33/035 ,  C30B29/06 ,  B01J4/00 ,  B01J19/02 ,  C23C16/24

CPC classification number: C01B33/035 ,  B01J4/002 ,  B01J19/02 ,  B01J2219/00132 ,  B01J2219/0236 ,  C21D7/00 ,  C21D7/02 ,  C21D7/13 ,  C22F1/14 ,  C23C16/24 ,  C23C24/04 ,  C30B29/06

Abstract: Reflective silver coatings on the inside surfaces of a Siemens reactor for polycrystalline silicon production are improved by a cold forming after-treatment of the silver coating.

公开(公告)号：US20210164124A1

公开(公告)日：2021-06-03

申请号：US17263631

申请日：2018-07-27

Applicant: WACKER CHEMIE AG

Inventor： Heinz KRAUS ,  Piotr FILAR

IPC: C25D17/10 ,  C25D13/12 ,  C01B33/035 ,  C30B28/14 ,  C30B29/60 ,  C30B29/06

Abstract: Electrode assemblies useful, inter alia, for mounting thin rods in Siemens reactors for manufacture of polysilicon, have a base segment which receives a holder segment, and an insert, interfacial surface(s) of which have depressions and/or elevations which reduce contact surface area, allowing the holder, base segment, insert, and optional intermediate segments to be constructed of materials having different thermal conductivities.

公开(公告)号：US20180208469A1

公开(公告)日：2018-07-26

申请号：US15744180

申请日：2016-10-10

Applicant: Wacker Chemie AG

Inventor： Dominik RENNSCHMID ,  Heinz KRAUS ,  Christian KUTZA

IPC: C01B33/035 ,  C23C16/24 ,  C23C16/44 ,  C23C16/46

Abstract: Improved sealing of Siemens reactor electrodes which results in improved reactor campaign times, is accomplished by use of an electrically insulating ring in combination with two seals, a first seal located in a groove in the insulating ring or in a groove in the reactor base plate adjacent the insulating ring, and a second seal not contained in a groove.

公开(公告)号：US20160167971A1

公开(公告)日：2016-06-16

申请号：US14907932

申请日：2014-07-10

Applicant: WACKER CHEMIE AG

Inventor： Goeran KLOSE ,  Heinz KRAUS ,  Franz SALZEDER

IPC: C01B33/035

CPC classification number: C01B33/035

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

Abstract translation: 通过进行基本上平行于视镜的反应器端表面的第一吹扫气流，并且在与观察窗表面成一定角度的位置在导光管内进行第二吹扫气流，从而减少用于CVD沉积硅的反应器中的视镜上的沉积 朝向反应堆的内部。

公开(公告)号：US20150166351A1

公开(公告)日：2015-06-18

申请号：US14633312

申请日：2015-02-27

Applicant: Wacker Chemie AG

Inventor： Martin WEBER ,  Erich DORNBERGER ,  Michael KERSCHER ,  Heinz KRAUS ,  Reiner PECH

IPC: C01B33/029 ,  C23C16/44 ,  C23C16/24 ,  C30B28/14 ,  C30B29/06

CPC classification number: C01B33/029 ,  B02C19/0056 ,  C01B33/02 ,  C01B33/035 ,  C23C16/24 ,  C23C16/4418 ,  C30B28/14 ,  C30B29/06 ,  Y10T428/12479

Abstract: The invention provides a polycrystalline silicon rod having a total diameter of at least 150 mm, including a core A having a porosity of 0 to less than 0.01 around a thin rod, and at least two subsequent regions B and C which differ in porosity by a factor of 1.7 to 23, the outer region C being less porous than region B.

Abstract translation: 本发明提供一种总直径至少为150mm的多晶硅棒，包括在细棒周围具有0至小于0.01的孔隙率的芯A和至少两个随后的区域B和C，其中孔隙率不同于 因子为1.7〜23，外部区域C比区域B多孔。

公开(公告)号：US20180065858A1

公开(公告)日：2018-03-08

申请号：US15810331

申请日：2017-11-13

Applicant: WACKER CHEMIE AG

Inventor： Goeran KLOSE ,  Heinz KRAUS ,  Franz SALZEDER

IPC: C01B33/035

CPC classification number: C01B33/035 ,  B01J12/00 ,  B01J12/02 ,  B01J19/24

Abstract: Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.

公开(公告)号：US20160297684A1

公开(公告)日：2016-10-13

申请号：US14777643

申请日：2014-02-26

Applicant: WACKER CHEMIE AG

Inventor： Goeran KLOSE ,  Heinz KRAUS ,  Tobias WEISS

IPC: C01B33/035 ,  C23C16/455

CPC classification number: C01B33/035 ,  C23C16/455

Abstract: The deposition of polycrystalline silicon onto heated filament rods in a Siemens process is improved by supplying reaction gas at least partially through nozzles in the vertical wall of the deposition reactor, at an angle of 0° to 45° to the reactor wall, towards the base plate of the reactor.

Abstract translation: 通过将反应气体至少部分地通过沉积反应器的垂直壁中的喷嘴以与反应器壁成0°至45°的角度朝向底部供应反应气体而将多晶硅沉积到加热的丝杆上 反应堆板。