公开(公告)号：US20160052790A1

公开(公告)日：2016-02-25

申请号：US14927779

申请日：2015-10-30

Applicant: Wacker Chemie AG

Inventor： Gerhard TRAUNSPURGER ,  Laszlo FABRY ,  Reiner PECH

IPC: C01B33/02

CPC classification number: C01B33/02 ,  C01B33/037 ,  C01P2002/88 ,  C01P2002/89 ,  C01P2002/90 ,  C01P2006/80 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  H01L21/02046

Abstract: The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

公开(公告)号：US20210087066A1

公开(公告)日：2021-03-25

申请号：US16603662

申请日：2018-02-08

Applicant: WACKER CHEMIE AG

Inventor： Karl-Heinz RIMBOECK ,  Uwe PAETZOLD ,  Gerhard TRAUNSPURGER

IPC: C01B33/107 ,  G01N33/2022 ,  C01B33/037

Abstract: Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700° C., b) directing metallurgical silicon in which the free carbon proportion is ≤150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes. As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

公开(公告)号：US20130216466A1

公开(公告)日：2013-08-22

申请号：US13772756

申请日：2013-02-21

Applicant: WACKER CHEMIE AG

Inventor： Gerhard TRAUNSPURGER ,  Laszlo FABRY ,  Reiner PECH

IPC: H01L21/02

CPC classification number: C01B33/02 ,  C01B33/037 ,  C01P2002/88 ,  C01P2002/89 ,  C01P2002/90 ,  C01P2006/80 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  H01L21/02046

Abstract: The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

Abstract translation: 本发明提供了在0.5-35ppbw的表面具有碳浓度的块状多晶硅。 用于清洗表面具有碳污染的多晶硅块的方法包括在350-600℃的温度下对反应器中的多晶硅块进行热处理，多晶硅块存在于惰性气体气氛中 热处理和热处理后的多晶硅块，其表面的碳浓度为0.5-35ppbw。