公开(公告)号：US20130216466A1

公开(公告)日：2013-08-22

申请号：US13772756

申请日：2013-02-21

申请人： WACKER CHEMIE AG

发明人： Gerhard TRAUNSPURGER ,  Laszlo FABRY ,  Reiner PECH

IPC分类号： H01L21/02

CPC分类号： C01B33/02 ,  C01B33/037 ,  C01P2002/88 ,  C01P2002/89 ,  C01P2002/90 ,  C01P2006/80 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  H01L21/02046

摘要： The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

摘要翻译： 本发明提供了在0.5-35ppbw的表面具有碳浓度的块状多晶硅。 用于清洗表面具有碳污染的多晶硅块的方法包括在350-600℃的温度下对反应器中的多晶硅块进行热处理，多晶硅块存在于惰性气体气氛中 热处理和热处理后的多晶硅块，其表面的碳浓度为0.5-35ppbw。

公开(公告)号：US20140004030A1

公开(公告)日：2014-01-02

申请号：US13709211

申请日：2012-12-10

申请人： Wacker Chemie AG

发明人： Laszlo FABRY ,  Peter GRUEBL ,  Christian HUBER

IPC分类号： C01B33/02 ,  B26F3/00

CPC分类号： C01B33/02 ,  B26F3/002 ,  C01B33/035 ,  Y10T225/10

摘要： The invention relates to a polycrystalline silicon portion having at least one fracture surface or cut surface, which includes metal contamination of from 0.07 ng/cm2 to 1 ng/cm2. The invention also relates to a method for breaking a silicon body, preferably a rod of polycrystalline silicon, including the steps: a) determining the lowest natural bending frequency of the silicon body; b) exciting the silicon body in its lowest natural bending frequency by means of an oscillation generator, the excitation being carried out at an excitation point of the silicon body such that the silicon body breaks at the excitation point; so that a silicon portion having a fracture surface results which includes metal contamination of from 0.07 ng/cm2 to 1 ng/cm2.

摘要翻译： 本发明涉及具有至少一个断裂面或切割面的多晶硅部分，其包括0.07ng / cm 2至1ng / cm 2的金属污染。 本发明还涉及一种用于破坏硅体，优选多晶硅棒的方法，包括以下步骤：a）确定硅体的最低自然弯曲频率; b）通过振荡发生器激发其最低自然弯曲频率的硅体，激发在硅体的激发点处进行，使得硅体在激发点处断裂; 从而导致具有0.07ng / cm 2至1ng / cm 2的金属污染的具有断裂面的硅部分。

公开(公告)号：US20160369393A1

公开(公告)日：2016-12-22

申请号：US15256855

申请日：2016-09-06

申请人： Wacker Chemie AG

发明人： Laszlo FABRY ,  Mikhail SOFIN

IPC分类号： C23C16/22 ,  C23C16/02

CPC分类号： C23C16/22 ,  C01B33/035 ,  C22C28/00 ,  C23C16/0209 ,  C30B13/00 ,  C30B15/02 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  Y10T428/298

摘要： A rod having a length of 0.5 m to 4 m and having a diameter of 25 mm to 220 mm, comprising a high-purity alloy composed of 0.1 to 50 mol % germanium and 99.9 to 50 mol % silicon, the alloy having been deposited on a thin silicon rod or on a thin germanium-alloyed silicon rod, the deposited alloy having a polycrystalline structure.

摘要翻译： 长度为0.5μm至4μm，直径为25mm至220mm的棒，包括由0.1至50mol％的锗和99.9至50mol％的硅组成的高纯度合金，该合金已沉积在 薄硅棒或薄的锗合金硅棒，沉积合金具有多晶结构。

公开(公告)号：US20160052790A1

公开(公告)日：2016-02-25

申请号：US14927779

申请日：2015-10-30

申请人： Wacker Chemie AG

发明人： Gerhard TRAUNSPURGER ,  Laszlo FABRY ,  Reiner PECH

IPC分类号： C01B33/02

CPC分类号： C01B33/02 ,  C01B33/037 ,  C01P2002/88 ,  C01P2002/89 ,  C01P2002/90 ,  C01P2006/80 ,  C30B11/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/06 ,  H01L21/02046

摘要： The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

公开(公告)号：US20140037959A1

公开(公告)日：2014-02-06

申请号：US13952050

申请日：2013-07-26

申请人： Wacker Chemie AG

发明人： Hanns WOCHNER ,  Laszlo FABRY

IPC分类号： C01B33/037 ,  B02C19/00

CPC分类号： C01B33/037 ,  B02C4/305 ,  B02C19/0056 ,  C01B33/02 ,  C22C29/08 ,  C22C38/00 ,  C30B29/06 ,  C30B35/007 ,  Y10T428/2982

摘要： The present invention relates to polycrystalline silicon chunks which are cubic and have a metal content of less than 200 pptw and a dopant content of less than 50 ppta. Methods for producing polycrystalline silicon chunks, include the steps of providing a polycrystalline silicon rod, comminuting the polycrystalline silicon rod into cubic chunks, and cleaning the polycrystalline silicon chunks, wherein comminution takes place using a spiked-roll crusher having at least one spiked roll, the spiked roll including W2C phases or WC phases with 0.1-10% of a metal carbide selected from the group consisting of titanium carbide, chromium carbide, molybdenum carbide, vanadium carbide, and nickel carbide or consisting of steel with 1-25% W.

摘要翻译： 本发明涉及立方体并且金属含量小于200pptw并且掺杂剂含量小于50ppta的多晶硅块。 制造多晶硅块的方法包括以下步骤：提供多晶硅棒，将多晶硅棒粉碎成立方体块，以及清洗多晶硅块，其中使用具有至少一个加标辊的加标辊式破碎机进行粉碎， 所述加标辊包括W2C相或WC相，其中0.1-10％的选自碳化钛，碳化铬，碳化钼，碳化钒和碳化镍的金属碳化物或由1-25％W的钢组成。