公开(公告)号：US3863070A

公开(公告)日：1975-01-28

申请号：US25027872

申请日：1972-05-04

Applicant: WHEELER ROBERT H ,  RALSTON RICHARD W

Inventor： WHEELER ROBERT H ,  RALSTON RICHARD W

IPC: H01L31/113 ,  H01L15/06

CPC classification number: H01L31/1136 ,  Y10S148/08 ,  Y10S148/115

Abstract: Quantum mechanical method and apparatus for detecting and modulating electromagnetic radiation in a wavelength range of from about 5 to about 50 Mu . A potential difference (gate voltage) is impressed across a channel formed in a siliconsilicon dioxide MOS assembly. The magnitude of the gate voltage is used to adjust the energy levels of the electrons in the channel and when resonant photons are introduced into the channel there occurs photoresistance along the channel, the magnitude of which is a function of the number of resonant photons entering the channel. The photoresistive effects are the result of the interaction between the quantized electrons in the channel and photons in the radiation introduced into the channel. The device may be voltage-tunable over the wavelength range and may be used as a detector set to sense radiation of a given wavelength or as a multispectral rapid scanning device. When a gate voltage is used to maximize the photoresistive effect for radiation of a given wavelength, the radiation may be amplitude modulated by superimposing a small auxiliary ac gate voltage on the dc gate voltage to periodically reduce the photoresistive effect, thus alternately absorbing and transmitting radiation.

Abstract translation: 用于检测和调制在约5至约50μm的波长范围内的电磁辐射的量子力学方法和装置。 在硅二氧化硅MOS组件中形成的沟道上施加电位差（栅极电压）。 栅极电压的大小用于调节通道中的电子的能级，并且当谐振光子被引入通道时，沿着沟道发生光阻，其大小是进入该通道的共振光子的数量的函数 渠道。 光致抗蚀效应是通道中量子化电子与引入通道的辐射光子之间相互作用的结果。 该装置可以在波长范围内是电压可调谐的，并且可以用作检测器组以感测给定波长的辐射或者作为多光谱快速扫描装置。 当使用栅极电压来最大化给定波长的辐射的光刻效果时，可以通过在直流栅极电压上叠加小的辅助ac栅极电压来对辐射进行幅度调制，以周期性地降低光致抗蚀剂效应，从而交替地吸收和传播辐射 。