公开(公告)号：US11519097B1

公开(公告)日：2022-12-06

申请号：US17849761

申请日：2022-06-27

申请人： WUHAN UNIVERSITY

发明人： Sheng Liu ,  Wei Shen ,  Gai Wu ,  Yuzheng Guo ,  Kang Liang ,  Qijun Wang ,  Shizhao Wang

IPC分类号： C30B25/18 ,  C30B29/04

摘要： The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.