Controlled shape semiconductor layer by selective epitaxy under seed structure
    1.
    发明授权
    Controlled shape semiconductor layer by selective epitaxy under seed structure 失效
    在种子结构下通过选择性外延控制形状半导体层

    公开(公告)号:US07686886B2

    公开(公告)日:2010-03-30

    申请号:US11535122

    申请日:2006-09-26

    IPC分类号: C30B25/00

    CPC分类号: C30B29/60 Y10S117/902

    摘要: A method for forming a structure of a desired cross-section on a substrate is provided. The method provides a seed structure comprising at least one support layer on the substrate. The support layer has a geometric shape related to the desired cross-section of the structure and is diffusive to a precursor constituent. The method further includes growing the structure by supplying at least one precursor constituent on the substrate. The desired cross-section of the structure is defined by the geometric shape of at least one support layer.

    摘要翻译: 提供了一种在基板上形成所需横截面结构的方法。 该方法提供了在基底上包括至少一个支撑层的种子结构。 支撑层具有与结构的期望横截面相关的几何形状并且扩散到前体成分。 该方法还包括通过在衬底上提供至少一种前体成分来生长该结构。 结构的期望横截面由至少一个支撑层的几何形状限定。