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    METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER
    1.
    发明申请
    METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER 有权
    在WAFER上分类缺陷的方法和系统

    公开(公告)号：US20120027287A1

    公开(公告)日：2012-02-02

    申请号：US13269038

    申请日：2011-10-07

    申请人： Wei FANG ,  Zhao-Li Zhang ,  Jack Jau

    发明人： Wei FANG ,  Zhao-Li Zhang ,  Jack Jau

    IPC分类号： G06K9/00

    CPC分类号： G06T7/0008 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

    摘要： A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.

    摘要翻译： 提供了在具有相同芯片和相应系统的晶片上分类缺陷的方法。 在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。 然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。 最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。 系统有一些模块分别对应于该方法的步骤。

    Method for inspecting localized image and system thereof
    2.
    发明授权
    Method for inspecting localized image and system thereof 有权
    检查本地化图像的方法及其系统

    公开(公告)号：US08606017B1

    公开(公告)日：2013-12-10

    申请号：US13073161

    申请日：2011-03-28

    申请人： Wei Fang ,  Jack Jau ,  Zhao-Li Zhang

    发明人： Wei Fang ,  Jack Jau ,  Zhao-Li Zhang

    IPC分类号： G06K9/46 ,  G06K9/50

    CPC分类号： G06K9/628 ,  G06K9/3216

    摘要： A plurality of points with identical geometric feature is compared with their SEM characteristic features to inspect defect in a localized image. Original design information is included in the geometric feature such that absolute compare can be performed in this inspection method. Further, this method can also be applied to the localized image with or without repeated or redundant pattern.

    摘要翻译： 将具有相同几何特征的多个点与其SEM特征相比较以检查局部图像中的缺陷。 原始设计信息包含在几何特征中，使得可以在该检查方法中进行绝对比较。 此外，该方法也可以应用于具有或不具有重复或冗余模式的局部图像。

    Method and system for determining a defect during charged particle beam inspection of a sample
    3.
    发明授权
    Method and system for determining a defect during charged particle beam inspection of a sample 有权
    用于确定样品的带电粒子束检查期间的缺陷的方法和系统

    公开(公告)号：US08068662B2

    公开(公告)日：2011-11-29

    申请号：US12414130

    申请日：2009-03-30

    申请人： Zhao-Li Zhang ,  Wei Fang ,  Jack Jau

    发明人： Zhao-Li Zhang ,  Wei Fang ,  Jack Jau

    IPC分类号： G06K9/00

    CPC分类号： G06T7/001 ,  G06T2207/30148

    摘要： A method for determining a defect during charged particle beam inspection of a sample locates at least one examination region within a charged particle microscopic image of the sample by making reference to a database graphic of the sample corresponding to the charged particle microscopic image. Each located examination region concerns at least one element of the sample, and each element has at least one characteristic in common. At least one point response value is then generated for each point in the located examination regions. The presence of a defect at the location of the concerned point is then determined by applying at least one decision tree operator to the generated point response values of the concerned point. Applications of the proposed method as a computing agent and a charged particle beam inspection system are also disclosed.

    摘要翻译： 用于在样品的带电粒子束检查期间确定缺陷的方法通过参考对应于带电粒子显微镜图像的样品的数据库图形来定位样品的带电粒子微观图像内的至少一个检查区域。 每个位置的检查区域涉及样品的至少一个元件，并且每个元件具有至少一个共同的特征。 然后为定位的检查区域中的每个点生成至少一个点响应值。 然后通过将至少一个决策树运算符应用于相关点的生成点响应值来确定在相关点的位置处的缺陷的存在。 还公开了所提出的方法作为计算代理和带电粒子束检查系统的应用。

    Method and system of classifying defects on a wafer
    4.
    发明授权
    Method and system of classifying defects on a wafer 有权
    在晶片上分类缺陷的方法和系统

    公开(公告)号：US08805054B2

    公开(公告)日：2014-08-12

    申请号：US13269038

    申请日：2011-10-07

    申请人： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

    发明人： Wei Fang ,  Zhao-Li Zhang ,  Jack Jau

    IPC分类号： G06K9/00

    CPC分类号： G06T7/0008 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

    摘要： A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.

    摘要翻译： 提供了在具有相同芯片和相应系统的晶片上分类缺陷的方法。 在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。 然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。 最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。 系统有一些模块分别对应于该方法的步骤。

    METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER
    6.
    发明申请
    METHOD AND SYSTEM OF CLASSIFYING DEFECTS ON A WAFER 审中-公开
    在WAFER上分类缺陷的方法和系统

    公开(公告)号：US20100158346A1

    公开(公告)日：2010-06-24

    申请号：US12343201

    申请日：2008-12-23

    申请人： Wei FANG ,  Zhao-Li Zhang ,  Jack Jau

    发明人： Wei FANG ,  Zhao-Li Zhang ,  Jack Jau

    IPC分类号： G06K9/00

    CPC分类号： G06T7/001 ,  G06T2207/30148

    摘要： Method of classifying the defects on a wafer having some same chips and corresponding system. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.

    摘要翻译： 对具有相同芯片和相应系统的晶片上的缺陷进行分类的方法。 在接收到通过使用带电粒子束扫描晶片形成的图像之后，检查这些图像，使得发现缺陷图像和无缺陷图像。 然后，将无缺陷图像转换为芯片的模拟布局，或者使用数据库来提供芯片的模拟布局。 最后，通过将图像与芯片的模拟布局进行比较来分类缺陷图像上的缺陷。 系统有一些模块分别对应于该方法的步骤。

    Method for inspecting overlay shift defect during semiconductor manufacturing and apparatus thereof
    7.
    发明授权
    Method for inspecting overlay shift defect during semiconductor manufacturing and apparatus thereof 有权
    在半导体制造期间检查重叠移位缺陷的方法及其装置

    公开(公告)号：US08923601B2

    公开(公告)日：2014-12-30

    申请号：US13240721

    申请日：2011-09-22

    申请人： Wei Fang ,  Hong Xiao ,  Jack Jau

    发明人： Wei Fang ,  Hong Xiao ,  Jack Jau

    IPC分类号： G06K9/00 ,  G01N23/00 ,  G03F7/20

    CPC分类号： G03F7/70633

    摘要： A method for inspecting overlay shift defect during semiconductor manufacturing is disclosed herein and includes a step for providing a charged particle microscopic image of a sample, a step for identifying an inspection pattern measure in the charged particle microscopic image, a step for averaging the charged particle microscopic image by using the inspection pattern measure to form an averaged inspection pattern measure, a step for estimating an average width from the averaged inspection pattern measure, and a step for comparing the average width with a predefined threshold value to determine the presence of the overlay shift defect.

    摘要翻译： 本文公开了一种用于在半导体制造期间检查覆盖偏移缺陷的方法，并且包括用于提供样品的带电粒子显微镜图像的步骤，用于识别带电粒子显微镜图像中的检查图案测量的步骤，用于使带电粒子平均的步骤 通过使用检查图案测量形成平均检查图案测量的微观图像，从平均检查图案度量估计平均宽度的步骤，以及将平均宽度与预定阈值进行比较以确定覆盖层的存在的步骤 移位缺陷。

    Method and system for measuring critical dimension and monitoring fabrication uniformity
    8.
    发明授权
    Method and system for measuring critical dimension and monitoring fabrication uniformity 有权

    公开(公告)号：US08432441B2

    公开(公告)日：2013-04-30

    申请号：US13032105

    申请日：2011-02-22

    申请人： Wei Fang ,  Hong Xiao ,  Jack Jau

    发明人： Wei Fang ,  Hong Xiao ,  Jack Jau

    IPC分类号： H04N7/18

    CPC分类号： H04N7/18 ,  G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/20016 ,  G06T2207/30148 ,  H04N7/183

    摘要： A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

    METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM
    9.
    发明申请
    METHOD FOR EXAMINING A SAMPLE BY USING A CHARGED PARTICLE BEAM 有权
    通过使用充电颗粒束来检验样品的方法

    公开(公告)号：US20100327160A1

    公开(公告)日：2010-12-30

    申请号：US12491013

    申请日：2009-06-24

    申请人： Yan Zhao ,  Jack Jau ,  Wei Fang

    发明人： Yan Zhao ,  Jack Jau ,  Wei Fang

    IPC分类号： G01N23/00 ,  H01J3/14

    CPC分类号： H01J37/265 ,  H01J37/28 ,  H01J2237/2817

    摘要： A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

    摘要翻译： 一种用扫描带电粒子束成像装置检查样品的方法。 首先，在样品的表面上指定图像区域和扫描区域。 这里，图像区域在扫描区域内完全重叠。 接下来，通过使用带电粒子束沿着既不平行也不垂直于扫描区域的取向的方向来扫描扫描区域。 可能的是，与图像区域重叠的扫描区域的仅一部分暴露于带电粒子束。 图像区域的形状和尺寸也可能与扫描区域的形状和尺寸基本相同，使得由带电粒子束投射的区域的尺寸几乎等于图像区域的尺寸。

    E-beam defect review system
    10.
    发明授权
    E-beam defect review system 有权
    电子束缺陷检查系统

    公开(公告)号：US08094924B2

    公开(公告)日：2012-01-10

    申请号：US12335458

    申请日：2008-12-15

    申请人： Jack Jau ,  Zhongwei Chen ,  Yi Xiang Wang ,  Chung-Shih Pan ,  Joe Wang ,  Xuedong Liu ,  Weiming Ren ,  Wei Fang

    发明人： Jack Jau ,  Zhongwei Chen ,  Yi Xiang Wang ,  Chung-Shih Pan ,  Joe Wang ,  Xuedong Liu ,  Weiming Ren ,  Wei Fang

    IPC分类号： G06K9/00

    CPC分类号： G06T7/001 ,  G01N23/04 ,  G01N2223/102 ,  G01N2223/426 ,  G01N2223/611 ,  G06T2207/10061 ,  G06T2207/30148

    摘要： An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.

    摘要翻译： 一种装置包括成像单元以对待审查的晶片进行成像，其中成像单元是经修改的SORIL柱。 改进的SORIL柱包括由于晶片表面拓扑而进行微聚焦的聚焦子系统，其中聚焦子系统验证从晶片表面反射的光栅图像的位置以调整焦点; 以及表面电荷控制，用于调节在复查过程期间由于电子辐射引起的电荷累积，其中气体分子在洪水枪光束下而不是在主光束下方注入。 改进的SORIL列还包括用于存储晶片设计数据库的存储单元; 以及用于管理缺陷定位，缺陷采样和缺陷分类的主计算机，其中主计算机和存储单元通过高速网络链接。