公开(公告)号：US20120138884A1

公开(公告)日：2012-06-07

申请号：US13396731

申请日：2012-02-15

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L45/00

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US20100193758A1

公开(公告)日：2010-08-05

申请号：US12362532

申请日：2009-01-30

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L47/00 ,  H01L29/66 ,  H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US20120142169A1

公开(公告)日：2012-06-07

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar V. Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US08309945B2

公开(公告)日：2012-11-13

申请号：US13396731

申请日：2012-02-15

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L29/02

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US08288254B2

公开(公告)日：2012-10-16

申请号：US13368851

申请日：2012-02-08

申请人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Wei Tian ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

公开(公告)号：US08134138B2

公开(公告)日：2012-03-13

申请号：US12362532

申请日：2009-01-30

申请人： Tian Wei ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Tian Wei ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L29/02

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US08289758B2

公开(公告)日：2012-10-16

申请号：US12943979

申请日：2010-11-11

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Wei Tian ,  Dexin Wang ,  Zheng Gao ,  Xiaobin Wang

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Wei Tian ,  Dexin Wang ,  Zheng Gao ,  Xiaobin Wang

IPC分类号： G11C11/16

CPC分类号： G11C11/161

摘要： Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.

摘要翻译： 公开了具有镜面绝缘间隔物的磁隧道结。 磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个 部分电子返回自由磁性层。

公开(公告)号：US20100128520A1

公开(公告)日：2010-05-27

申请号：US12502213

申请日：2009-07-13

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

IPC分类号： G11C11/14

CPC分类号： G11C11/161

摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

公开(公告)号：US20110298068A1

公开(公告)日：2011-12-08

申请号：US13210436

申请日：2011-08-16

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： H01L29/82

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US08023316B2

公开(公告)日：2011-09-20

申请号：US12899645

申请日：2010-10-07

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compensation element is disclosed. The magnetic tunnel junction includes a synthetic antiferromagnetic reference element, and a synthetic antiferromagnetic compensation element having an opposite magnetization moment to a magnetization moment of the synthetic antiferromagnetic reference element. A free magnetic layer is between the synthetic antiferromagnetic reference element and the synthetic antiferromagnetic compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the synthetic antiferromagnetic reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括合成反铁磁参考元件和具有与合成反铁磁参考元件的磁化矩相反的磁化力矩的合成反铁磁补偿元件。 合成反铁磁参考元件和合成反铁磁补偿元件之间的自由磁性层，并且电绝缘和非磁性隧道势垒层将自由磁性层与合成反铁磁参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。